Semiconductor Film Deposition Cycles for High-Aspect-Ratio Coverage
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Solution Overview
Problem
Forming high-quality films at low temperatures on substrates with high aspect ratios is challenging due to the low heat-resistant temperature of amino ligand-based processing gases, which decompose at high temperatures, and the inefficiency of oxygen plasma and ozone in reaching the bottom of such substrates.
Innovation Solution
A technique involving loading a substrate into a process chamber, supplying a processing gas containing H2O radicals, a halogen element gas, and an oxygen or nitrogen gas, with repeated cycles to improve adsorption and achieve uniform film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a processing gas including an amino ligand is used to form a film on a substrate with high aspect ratio, then step coverage is improved, but the processing temperature must be lowered which causes the amino ligand to decompose
Solution Approach 1:
The patent changes the chemical parameters of the processing gas by replacing amino ligand-based precursors with halogen-based precursors (such as SiCl4). This parameter change allows the process to be conducted at lower temperatures without decomposition, while maintaining good step coverage through the repeated cycling process that ensures uniform distribution of reactants throughout the high aspect ratio structures
Solution Approach 2:
The patent employs periodic action through repeated cycles of supplying precursor gas, reactant gas, and purge gas. This cyclic process allows controlled deposition at low temperatures by repeatedly exposing the substrate to reactants, ensuring uniform film formation throughout high aspect ratio structures without requiring high temperatures that would decompose the processing gas
2Manufacturing precision
If oxygen plasma is used to provide high energy oxidizing species at low temperature, then film quality is improved, but the plasma cannot reach the bottom of high aspect ratio substrates
Solution Approach 1:
The patent uses a halogen-based precursor gas (such as SiCl4) as an intermediary that can effectively reach and adsorb on surfaces throughout high aspect ratio structures. This precursor acts as a mediator that distributes uniformly through the complex geometry, allowing subsequent reaction with oxidizing species to form high-quality films even in areas difficult to reach with plasma
3Temperature
If ozone is used to provide oxidizing species at low temperature, then processing temperature is reduced, but O3 becomes inactive due to collision with walls
Solution Approach 1:
The patent changes the parameter of the oxidizing gas from ozone (O3) to molecular oxygen (O2). This parameter change prevents the inactivation issue of ozone at low temperatures while still enabling effective oxidation. The combination of halogen-based precursor and molecular oxygen in a cyclic process achieves low temperature processing with maintained reactivity and uniform film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of high-quality films at low temperatures by enhancing the adsorption of halogen-based precursors, ensuring uniform coverage from the bottom to the top of high aspect ratio substrates, and improving processing throughput.
Implementation Method 1
improving adsorptive of a halogen-based precursor
Implementation Method 2
supplying a processing gas including H2O-containing radicals to the substrate
Data Source
AI summary
A method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) supplying a processing gas including H2O-containing radicals to the substrate; (c) supplying a gas including a halogen element; (d) supplying a gas including one or both of an oxygen element and a nitrogen element after (c); (e) repeating (c) and (d); and (f) repeating (b) and (e).