Plasma Partition Wall Shutter for Deposition-Free Discharge
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Solution Overview
Problem
In vertical type plasma processing apparatuses, the deposition of processing gases on internal surfaces, such as the partition wall, leads to conductive film formation, which interferes with plasma generation and requires frequent chamber cleaning, reducing operational efficiency and extending processing times.
Innovation Solution
A plasma processing apparatus with a shutter mechanism that controls communication between the reactor and internal space, preventing gas from entering the internal space during gas supply, thereby preventing film deposition on the partition wall and maintaining electrical insulation for sustained plasma discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the processing gas is supplied to the internal space of the partition wall, then the conductive film formation on substrates is enabled, but the film deposition on internal surfaces such as the partition wall occurs, interfering with plasma generation
Solution Approach 1:
The internal space is segmented from the processing container through the partition wall, creating a separate region where processing gas can be supplied independently. The communication hole with shutter mechanism further segments the gas flow path, allowing selective supply to substrates while preventing deposition on partition wall internal surfaces.
Solution Approach 2:
The shutter mechanism acts as an intermediary control element between the processing container and the internal space. By opening or closing the communication hole, it mediates the gas flow to achieve conductive film formation on substrates while preventing harmful deposition on the partition wall.
2Reliability
If the partition wall is provided to cover the opening in the sidewall, then the plasma generation in the internal space is enabled, but the communication between the processing container and internal space is blocked
Solution Approach 1:
The partition wall is made dynamically controllable through the shutter mechanism. The communication hole can be opened or closed as needed, transforming the static partition wall into a dynamic structure that adapts to different operational requirements, enabling both plasma generation and gas communication.
Solution Approach 2:
The shutter mechanism is positioned in advance within the partition wall structure, ready to control gas flow before plasma generation begins. This preliminary arrangement ensures that gas can be supplied to the internal space when needed while maintaining the structural integrity for plasma generation.
3Reliability
If the film deposition on the partition wall occurs, then the chamber cleaning frequency increases, but the operational efficiency decreases and processing time extends
Solution Approach 1:
The shutter mechanism converts the potential harm of uncontrolled gas flow (which causes film deposition) into a beneficial control feature. By selectively opening or closing the communication hole, it prevents gas from reaching areas where deposition would occur, transforming a problematic situation into a controlled process that maintains operational efficiency.
Solution Approach 2:
The shutter mechanism applies preliminary anti-action by preventing processing gas from entering regions where it would cause harmful film deposition. This preventive measure is taken before deposition can occur, eliminating the need for frequent chamber cleaning and maintaining high operational efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for the formation of conductive films on substrates while preventing film deposition on internal surfaces, ensuring consistent plasma generation and extending the dry cleaning cycle, thus improving operational efficiency and reducing processing time.
Implementation Method 1
a plasma is generated in an internal space covered with the plasma partition wall
Implementation Method 2
a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall
Implementation Method 3
a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space
Implementation Method 4
the deposition of processing gases on internal surfaces, such as the partition wall, leads to conductive film formation
Data Source
AI summary
A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall configured to cover the opening and to define an internal space communicating with an inside of the processing container, a processing gas supply configured to supply a processing gas to the internal space, a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall, and a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space.