Silicon Oxide Deposition Using Plasma Pulses for Low-Temperature Conformality
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Solution Overview
Problem
There is a need for silicon-containing materials with excellent conformality, low dielectric constant, low leakage, and excellent wet etch resistance, particularly for 3D integrated circuits, which existing technologies fail to provide effectively at low temperatures suitable for advanced semiconductor processing.
Innovation Solution
A method involving a silicon precursor pulse and a plasma pulse in a reaction chamber, where the silicon precursor includes a group 13 or 15 element bonded with silicon and oxygen, and the plasma is generated using a noble gas or H2, to form layers such as silicon oxide or silicon oxycarbide, utilizing a semiconductor processing apparatus with a heater, plasma module, and controller to maintain optimal conditions for deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form silicon-containing layers, then the layers can be formed at lower temperatures, but the conformality and material properties (dielectric constant, resistivity, wet etch rate resistance) are insufficient
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using specific silicon precursors (such as silane, methylsilane, or phenylsilane) combined with oxygen-containing precursors (such as ozone, nitrogen dioxide, or oxygen plasma). This parameter change enables the formation of silicon oxide layers with superior conformality and enhanced wet etch rate resistance at low temperatures, resolving the contradiction between conformality and etch resistance.
Solution Approach 2:
The patent employs composite deposition approaches where silicon precursors are combined with oxygen-containing precursors in controlled sequences. This creates composite material structures (silicon oxide layers with controlled stoichiometry and composition) that simultaneously achieve excellent conformality and high wet etch rate resistance, addressing both requirements that conventional single-material deposition cannot satisfy.
2Temperature
If low-temperature processes are used for deposition, then the process temperature is reduced, but the material properties and conformality deteriorate
Solution Approach 1:
The patent modifies the chemical reaction parameters by introducing oxygen-containing precursors (ozone, nitrogen dioxide, oxygen plasma) that enable oxidation reactions to proceed efficiently at low temperatures. This parameter change allows conformal silicon oxide layer formation at temperatures below 400°C, maintaining high conformality while reducing process temperature.
Solution Approach 2:
The patent replaces thermal energy (high temperature) with chemical energy (reactive precursors like ozone and oxygen plasma) to drive the deposition reaction. This substitution allows the formation of high-quality conformal layers at low temperatures by using chemically reactive species that can deposit material without requiring high thermal activation energy.
3Use of energy by moving object
If low-temperature deposition is used, then energy consumption is reduced, but the leakage current increases
Solution Approach 1:
The patent changes the deposition parameters by using oxygen-rich precursors and controlled oxygen exposure during deposition. This creates silicon oxide layers with higher oxygen content and better stoichiometry, which form more complete and defect-free dielectric structures. The improved material quality reduces leakage current while maintaining low processing temperature and energy consumption.
Solution Approach 2:
The patent incorporates preliminary oxygen exposure steps before and during the silicon deposition process. This preliminary oxidation action ensures that the silicon layer forms with proper oxide structure and stoichiometry from the beginning, preventing defects that would cause leakage. This preliminary action achieves low leakage current without requiring high temperatures or additional energy-intensive post-processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves self-limiting growth up to 500°C, resulting in highly etch-resistant silicon-containing layers with high growth-per-cycle, suitable for various semiconductor applications including etch stop layers and back-end-of-line dielectrics, with excellent conformality and low leakage.
Implementation Method 1
The plasma pulse comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.
Implementation Method 2
A deposition cycle comprises a silicon precursor pulse and a plasma pulse. The silicon precursor pulse comprises exposing the substrate to a silicon precursor.
Data Source
AI summary
Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.