Ion Beam Etching Device Variable Magnetic Field Control
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Solution Overview
Problem
Ion beam etching devices face challenges in achieving accurate etching performance due to divergence caused by repulsive forces between positive ions, leading to scattering and non-uniformity of ion impact angles on substrates, which results in irregular etching patterns.
Innovation Solution
The implementation of an ion beam etching device with a variable magnetic field application part, including electromagnets and a coil, that generates a controlled and asymmetric magnetic field along the ion beam's path to reduce scattering by adjusting the magnetic field distribution and intensity, thereby improving the coherence and uniformity of the ion beam.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion beams are used for etching, then etching capability is achieved, but divergence caused by repulsive forces between positive ions occurs leading to scattering
Solution Approach 1:
A magnetic field is introduced as an intermediary force to counteract the repulsive forces between positive ions. The magnetic field applies a Lorentz force that balances the Coulomb repulsion, enabling ions to maintain a coherent beam trajectory without direct intervention in the ion-ion interaction itself.
Solution Approach 2:
The patent applies a variable magnetic field with specific intensity and distribution parameters to control ion beam divergence. By adjusting the magnetic field strength and spatial distribution, the system optimizes the balance between maintaining ion beam coherence and achieving effective etching, directly addressing the parameter trade-off between beam stability and etching capability.
2Productivity
If ion beams are accelerated to improve etching performance, then etching efficiency increases, but scattering and non-uniformity of ion impact angles increase
Solution Approach 1:
The patent employs a variable magnetic field that can be dynamically adjusted in intensity and distribution. This dynamic control allows the system to adapt the magnetic field parameters during the etching process, maintaining optimal ion beam coherence across different acceleration conditions and ensuring uniform ion impact angles while preserving high etching efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces etching scattering and enhances the accuracy and uniformity of the etching process, resulting in more precise etching performance and improved substrate processing.
Implementation Method 1
a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field
Implementation Method 2
divergence caused by repulsive force between positive ions used as an ion beam
Implementation Method 3
the variable magnetic field application part may include electromagnets arranged on an outer surface of the process chamber in a radial shape
Data Source
AI summary
An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.