Thin Film Treatment Process for Semiconductor Devices
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Solution Overview
Problem
Current atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes result in thin films with poor mechanical and electrical properties, leading to issues like current leakage and reduced dielectric constant, necessitating a method to improve these properties post-deposition without modifying existing ALD recipes.
Innovation Solution
A method involving exposure of the deposited thin film to a helium plasma at controlled temperatures, with substrate heating and RF biasing to bombard the film with helium ions, enhancing mechanical and electrical properties by densifying the film and removing contaminants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ALD or CVD process is used to deposit thin films for device scaling, then film thickness control and conformality are improved, but mechanical and electrical properties of the film deteriorate
Solution Approach 1:
The patent applies plasma treatment with controlled parameters (power, pressure, gas composition, treatment time) to modify the physical and chemical properties of deposited films. By adjusting plasma treatment parameters, the film's electrical and mechanical properties are improved without changing the deposition process itself, thus resolving the contradiction between good thickness control and poor film quality
Solution Approach 2:
The patent creates a composite structure by combining the deposited film with plasma-treated surface layers. The plasma treatment introduces new phases and modifies existing ones, creating a composite material system that retains the good conformality of ALD/CVD films while adding improved electrical and mechanical properties through the plasma-modified surface layer
2Manufacturing precision
If ALD or CVD process is used to deposit thin films for device scaling, then film conformality is improved, but mechanical strength of the film deteriorates
Solution Approach 1:
Plasma treatment parameters (power density, exposure time, gas composition) are optimized to enhance film density and mechanical strength. The plasma process modifies bonding characteristics and reduces voids in the film structure, improving mechanical properties while preserving the conformal deposition achieved by ALD/CVD
3Ease of operation
If existing ALD recipes are used without modification, then process simplicity is maintained, but film quality remains poor
Solution Approach 1:
The patent separates the deposition process from the film quality improvement process. The ALD/CVD deposition maintains its simple, optimized recipe, while a distinct plasma treatment step is added afterward to improve film properties. This segmentation allows each process to be independently optimized without complicating the original deposition recipe
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This treatment process improves the film's dielectric properties, density, and tensile strength, reducing gate leakage and ensuring proper device function, while allowing the use of existing ALD recipes without modification.
Implementation Method 1
exposing a surface of the low quality film to a plasma containing a process gas that comprises helium (He)
Implementation Method 2
a substrate RF bias can be applied to cause ions formed in the plasma to bombard the surface of the low quality film
Implementation Method 3
while the substrate is heated to a first temperature between about 150° C. and about 500° C.
Data Source
AI summary
A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.