Ion Implanter Chamber Cleaning via Hydrogen Plasma
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Solution Overview
Problem
Existing ion implanters face productivity issues due to limited ion source chamber lifetime and 'poisoning' effects from carbon or oxygen ion generation, leading to reduced ion output and instability, as well as adverse impacts on subsequent ion generation processes.
Innovation Solution
A method involving the use of hydrogen or chlorine containing gases to clean and recondition the ion source chamber between ion generation processes, utilizing plasma generation with these gases to remove contaminants and prevent poisoning, with endpoint detection methods to determine cleaning duration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion source chamber is cleaned frequently to remove contaminants, then chamber integrity and subsequent ion generation are maintained, but ion implanter productivity is reduced due to cleaning downtime
Solution Approach 1:
The method enables continuous operation by performing cleaning actions during transitions between different ion generation processes rather than requiring separate dedicated cleaning cycles. The cleaning plasma is generated using the same ion source infrastructure, allowing seamless transition from carbon/oxygen ion generation to cleaning and back to subsequent ion generation without chamber evacuation or extended downtime.
Solution Approach 2:
Hydrogen or chlorine containing gases serve as intermediary substances that facilitate the cleaning process. These gases generate cleaning plasma that actively removes carbon or oxygen containing deposits from chamber walls, acting as a mediator between the poisoned chamber state and the desired clean state for subsequent high-productivity ion generation.
2Productivity
If ion source chamber is not cleaned after carbon or oxygen ion generation, then ion implanter productivity is maintained, but ion output becomes unstable and chamber poisoning occurs
Solution Approach 1:
The method performs a cleaning action with hydrogen or chlorine containing gas before subsequent ion generation processes to prevent the negative effects of chamber poisoning. This preliminary cleaning action removes carbon or oxygen containing deposits from the chamber walls, ensuring optimal conditions for subsequent ion generation and maintaining high productivity across multiple processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the frequency and effectiveness of ion source chamber cleaning, maintaining high ion implanter productivity by preventing contamination and maintaining chamber integrity.
Implementation Method 1
utilizing plasma generation with these gases to remove contaminants and prevent poisoning
Implementation Method 2
supplying a hydrogen or chlorine containing gas to the ion source chamber for a period of time after stopping the supply of the gaseous substance
Data Source
AI summary
A technique for improving ion implanter productivity is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving productivity of an ion implanter having an ion source chamber. The method may comprise supplying a gaseous substance to the ion source chamber, the gaseous substance comprising one or more reactive species for generating ions for the ion implanter. The method may also comprise stopping the supply of the gaseous substance to the ion source chamber. The method may further comprise supplying a hydrogen containing gas to the ion source chamber for a period of time after stopping the supply of the gaseous substance.