Shower Head Buffer Chamber Temperature Control
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Solution Overview
Problem
The existing single-wafer substrate processing apparatuses face challenges in forming films with high step coverage on substrates with high aspect ratio grooves, leading to non-uniform film characteristics and low productivity due to by-product generation in the buffer space during the alternate supply of process gases.
Innovation Solution
A substrate processing apparatus with a process chamber, a shower head having a buffer chamber, and a heating unit that alternately supplies at least two types of gases while heating the buffer chamber to a first temperature and the process chamber to a second temperature higher than the first, preventing by-product formation and ensuring uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single-wafer apparatus with buffer space is used to evenly supply gas onto the substrate, then gas supply uniformity is improved, but by-products are generated in the buffer space due to gas reactions
Solution Approach 1:
The gas supply system is segmented into multiple independent gas supply ports instead of using a single buffer space. This allows separate control of gas supply locations and prevents unwanted gas reactions in the buffer space while maintaining uniform gas distribution across the substrate surface.
Solution Approach 2:
The buffer space is removed from the system entirely. Gas is supplied directly to the substrate through multiple distributed ports without passing through a shared buffer chamber, thereby eliminating the source of by-product generation while preserving the benefit of even gas distribution.
2Manufacturing precision
If alternate supply method of at least two types of gases is used to form film, then film formation capability is improved, but productivity is reduced due to large number of processes
Solution Approach 1:
Multiple gas supply ports enable continuous film formation without requiring complete purge cycles between different gas types. The system can maintain continuous operation by switching between different gas supply locations, eliminating idle time and improving productivity while preserving film quality.
Solution Approach 2:
The system uses periodic switching between different gas supply ports in a coordinated manner, allowing overlapping deposition cycles and reducing the total number of discrete process steps required for multi-layer film formation.
3Stability of the object's composition
If buffer space is used for gas supply, then gas distribution uniformity is improved, but remnant gases react to generate by-products
Solution Approach 1:
The buffer space is completely removed from the gas supply path. Gas is delivered directly to the substrate through multiple distributed ports, eliminating the confined space where remnant gases would accumulate and react to form by-products.
Solution Approach 2:
Multiple distributed gas supply ports act as intermediaries between the gas source and substrate, providing uniform gas distribution without requiring a buffer space. This intermediary structure prevents gas accumulation and unwanted reactions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances productivity and film uniformity by preventing by-product attachment in the buffer space, thereby improving the characteristics of semiconductor devices.
Implementation Method 1
a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system
Implementation Method 2
a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head
Implementation Method 3
a shower head including a buffer chamber and installed at upstream side of the process chamber
Data Source
AI summary
A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system.