Edge Through-Silicon Vias TSV Distance Testing
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Solution Overview
Problem
Existing methods for determining the minimum acceptable through-silicon via (TSV) distance from side edges in stacked semiconductor chips lack precision, as they often rely on single TSV assessments, which do not provide sufficient granularity and can lead to formation of poorly connected TSVs.
Innovation Solution
A method involving multiple TSVs at different distances from the side edges, where a conductivity test is performed on each TSV, and the minimum acceptable TSV distance is determined based on the last consecutive TSV that passes the test without preceding TSVs failing, ensuring well-formed TSVs are formed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a single TSV assessment method is used to determine minimum acceptable TSV distance, then the determination process is simple, but the precision and reliability of TSV connection quality are insufficient
Solution Approach 1:
The patent divides the TSV assessment into multiple segments by performing conductivity tests on multiple TSVs at different distances from the side edge. Each TSV test provides a segmented data point that collectively determines the minimum acceptable distance, thereby improving measurement precision without requiring a single complex test system.
Solution Approach 2:
The patent performs conductivity tests on more TSVs than the single TSV assessment method, specifically testing multiple TSVs at progressively smaller distances from the side edge. This excessive testing approach ensures that the minimum acceptable distance is accurately identified by finding the last consecutive TSV that passes the test, improving reliability.
2Reliability
If multiple TSVs at different distances are tested, then the determination of minimum acceptable TSV distance becomes more precise, but the testing time and process complexity increase
Solution Approach 1:
The patent performs preliminary conductivity tests on multiple TSVs in a systematic sequence from larger to smaller distances. By establishing the testing protocol and performing preliminary assessments on multiple TSVs simultaneously, the method efficiently determines the minimum acceptable distance while reducing overall testing time through parallel evaluation criteria.
Solution Approach 2:
The testing method uses the conductivity test results from each TSV to automatically determine whether to continue testing at smaller distances. The process self-regulates by identifying the last consecutive passing TSV, eliminating the need for external intervention or complex decision-making, thereby reducing time loss while maintaining high reliability.
3Manufacturing precision
If TSV distance from side edges is not precisely determined, then the manufacturing process is simpler, but poorly connected TSVs are formed reducing product quality
Solution Approach 1:
The patent implements a feedback mechanism where conductivity test results from multiple TSVs are used to determine the minimum acceptable distance. This feedback loop ensures that TSVs are formed at optimal distances from the side edge, improving manufacturing precision. The systematic testing approach provides clear guidance for TSV placement while maintaining ease of manufacture through standardized test procedures.
Solution Approach 2:
The patent changes the parameter of TSV distance from the side edge by systematically testing multiple TSVs at different distances. This parameter variation approach identifies the optimal distance range for TSV formation, ensuring high manufacturing precision. The method maintains ease of manufacture by using standard conductivity testing equipment and procedures while varying only the TSV placement parameter.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise determination of the minimum acceptable TSV distance, enhancing the formation of well-connected TSVs and improving the reliability of stacked semiconductor chips by assessing multiple distances simultaneously.
Implementation Method 1
A conductivity test is performed on each of the plurality of edge through-silicon vias
Data Source
AI summary
Disclosed is a plurality of through-silicon vias (TSVs) and related systems, methods, and devices. An electronic device includes a stack of chips, a first TSV, and a second TSV. The stack of chips includes one or more side edges at a perimeter of the stack of chips. A TSV zone of the stack of chips is within a predetermined distance from the one or more side edges. The first TSV is within the TSV zone of the stack of chips at a first distance from the one or more side edges. The second TSV is within the TSV zone of the stack of chips at a second distance from the one or more side edges. The second distance is shorter than the first distance.