EEPROM Dual Voltage Programming Modes
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Solution Overview
Problem
EEPROM programming is slow for initial large data loading, and high programming voltage accelerates memory aging, necessitating a compromise between speed and endurance.
Innovation Solution
Implementing a dual programming mode using different voltage levels for EEPROMs, where a higher voltage is applied for fast programming of entire memory planes or pages, and a lower voltage for partial programming, with a memory controller managing the voltage switching between these modes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a high programming voltage is applied to EEPROM cells, then programming speed is improved, but memory lifetime is degraded
Solution Approach 1:
The patent implements dynamic voltage selection where the programming voltage is adjusted based on the programming mode. A first programming mode uses a first voltage level optimized for speed, while a second programming mode uses a second voltage level optimized for endurance. The controller dynamically switches between these modes depending on whether the operation is an initial full-programming or a subsequent update operation.
Solution Approach 2:
The patent changes the voltage parameter based on the programming stage and requirements. For initial programming of entire memory planes or pages, a higher voltage is applied to reduce programming time. For subsequent programming operations, a lower voltage is used to minimize stress on the memory cells and preserve lifetime. This parameter adaptation resolves the contradiction between speed and reliability.
2Productivity
If a high programming voltage is used for fast programming, then productivity is improved, but memory endurance is reduced
Solution Approach 1:
The patent segments the programming operations into two distinct categories: initial programming operations (full-plane or full-page programming) and subsequent programming operations (updates or partial programming). Each segment is assigned an appropriate voltage level - higher voltage for initial programming to maximize throughput, and lower voltage for subsequent operations to preserve endurance. This segmentation allows the system to optimize for productivity when needed while protecting memory longevity.
Solution Approach 2:
The system dynamically adapts the programming voltage based on the operation type. The controller identifies whether the current programming operation is an initial operation requiring high throughput or a subsequent operation requiring endurance preservation, and accordingly selects the appropriate voltage level. This dynamic adaptation enables the system to achieve high productivity during initial programming while maintaining memory endurance for the device's operational lifetime.
Data Source
AI summary
A method of programming an EEPROM, including: a first mode where a writing into cells is performed under a first voltage; and a second mode where the writing is performed under a second voltage smaller than the first one.