E-fuse Circuit Using FET Threshold Voltage Shifting
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Solution Overview
Problem
Current electronic fuse (e-fuse) circuits are area-inefficient and require a separate high-voltage power supply to program, leading to increased chip real estate and additional expense.
Innovation Solution
A circuit design utilizing field effect transistors (FETs) that shifts threshold voltage by applying elevated temperature and voltage conditions, allowing for programming without a separate fuse-blow power supply, using a combination of p-channel and n-channel FETs to sense and write states efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If current e-fuse circuit designs are used, then the fuse can be programmed, but the chip area occupied is large and a separate high-voltage power supply is required
Solution Approach 1:
The patent combines the fuse programming function with the existing power supply circuitry by utilizing the second field effect transistor as a programmable switch controlled by storage nodes. This eliminates the need for a separate high-voltage power supply while maintaining the ability to program the fuse, thereby reducing chip area and power supply complexity
Solution Approach 2:
The patent changes the operating parameters of the field effect transistors by applying elevated temperature and voltage conditions to shift threshold voltage. This allows the circuit to be programmed using standard power supply voltages rather than requiring separate high-voltage sources, reducing device complexity while enabling programming functionality
2Ease of manufacture
If field effect transistor fatigue conditions are applied to shift threshold voltage, then programming is achieved without separate power supply, but the process requires elevated temperature and voltage conditions
Solution Approach 1:
The patent applies fatigue conditions (elevated temperature and voltage) in advance during the programming phase to shift the threshold voltage of field effect transistors. This preliminary action modifies the transistor characteristics before normal operation, enabling the circuit to function with standard power supplies while accepting temporary extreme conditions only during the programming step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in an area-efficient e-fuse circuit that does not require a separate power supply for programming, reducing chip area usage and fabrication costs while maintaining reliable state sensing.
Implementation Method 1
applying field effect transistor fatiguing conditions to the circuit... maintaining the states of the first and second storage nodes and the until a threshold voltage of the third field effect transistor increases by an amount detectable by the means for sensing
Data Source
AI summary
An e-fuse circuit, a method of programming the e-fuse circuit, and a design structure of the e-fuse circuit. The method includes in changing the threshold voltage of one selected field effect transistor of two field effect transistors connected to different storage nodes of the circuit so as to predispose the circuit place the storage nodes in predetermined and opposite states.