Semiconductor/Solid-State Device Details TRIZ Cases

A chip-embedded substrate method applies solder to recessed contacts and temperature-cycles the assembly to define input output pins.

Embedding a copper heat dissipation layer in the encapsulant reduces manufacturing complexity and suppresses yield loss compared to post-assembly methods.

A metal protection layer covers semiconductor devices on a substrate to enable safe handling during manufacturing.

A folded heat conductive sheet thermally couples components to cooling mechanisms via flexible deformation.

Integrating components inside the substrate volume resolves space constraints while supporting multiple redistribution layers.

Segmented conductive sidewalls and layers shield specific chips from magnetic interference without increasing package volume or thickness.

A thin electronic package integrates an electromagnetic interference shield layer with thermally conductive encapsulation material.

A protective layer on a conductor bump resists etchant during semiconductor die singulation, preserving bump material for reliable attachment.

A zinc-based solder joint structure uses a copper film covered by a noble metal film to form an intermetallic layer.

Peripheral grounding vias compensate for effective wafer resistance during single pad lapping, eliminating current crowding errors in stripe height measurement.

An adhesive agent fills a metal frame groove to secure the electronic substrate, preventing molded resin detachment from vibration.

Embedding a high-density patch in a low-density substrate reduces manufacturing cost and thickness while maintaining electrical performance.

Vertical vias penetrate encapsulation layers to connect chips, resolving wire bonding capacitance limits without TSV complexity.

A dam material creates an air gap adjacent to stress-sensitive semiconductor regions to isolate circuits from thermal expansion forces.

Securing elements integrated into the electronics package anchor heat dissipating devices directly to the component periphery.

A reservoir structure stores liquid thermal interface material to maintain consistent gap filling between a flip chip and its lid.

Segmented etching with buffer layers resolves non-simple spatial periods to achieve uniform via formation in high-density NAND devices.

A field effect transistor circuit shifts threshold voltage to program e-fuse states without external high-voltage supplies.

Capillary channels drive phase-change oscillation in a pulsating heat pipe, enabling reliable cooling of power electronics at elevated liquid temperatures.

A conformal shield forms on a semiconductor package body to reduce electromagnetic interference without adding bulky external lids.

Exposing substrate terminals via mold windows eliminates protruding leadframes, reducing inductance and simplifying cooler attachment.

Placing capacitors vertically relative to signal lines reduces gate driving circuit area, enabling narrower display borders without compromising function.

Supporting patterns prevent capping layer collapse while low-k materials minimize capacitive coupling in semiconductor devices.

Direct air bridge grounding minimizes inductance from long lateral traces, maintaining high-frequency gain despite increased source electrode count.

Selective roughening of encapsulant surfaces prevents delamination under thermal stress by enhancing mechanical interlocking with functional structures.

Embedding semiconductor chips inside the carrier core reduces parasitic inductance and resistance, improving high-frequency switching performance.

An electrical connection device embeds an insulator in a conductive plate cutout to route a control terminal path on the surface.

Segmenting the device into two packages minimizes warpage during assembly while maintaining high density.

Stacked redistribution parts fan out I/O signals vertically, reducing device height while maintaining signal transmission reliability.

Vertical stacking with segmented redistribution structures reduces warpage while minimizing electrical path distances.

A modified reticle pattern with a protruding portion corrects optical proximity effects during semiconductor lithography.

Differentiated plated layer thicknesses over gate and source pads reduce substrate warpage and pad cracking during wire bonding.

Pulsed deposition layer processing with a catalyst precursor enables rapid growth of highly conformal dielectric films at low temperatures.

Annealed copper alloy layer acts as etch stop to eliminate via recesses from mask misalignment.

Silicon oxide layer doped with phosphorus or boron traps sodium and potassium ions to stop leakage currents that degrade charge retention.

Multi-layer Al alloy wiring structure with rare earth elements and nitride layers prevents hillock formation at 600°C.

Nickel and gold layers buffer mechanical stress on bonding pads, preventing peeling failures that compromise reliability in scaled semiconductor devices.

Vacuum-sealed temperature control chamber removes heat from integrated circuits, preventing mechanical vibration interference with optical focus.

Hydrogen plasma etching removes native oxide without silicon debris or fluorine contamination, reducing contact resistance.

Non-uniform channel doping in a semiconductor switching device reduces harmonic power, meeting stringent -70 dBm rejection requirements.

A power semiconductor module uses a lead frame with specific terminal lengths to enable precise wire bonding on a DBC substrate.

Mounting intact wafer sections on a temporary carrier simplifies fan out packaging steps, reducing alignment errors during encapsulation.

Conductive layer extensions guide contact hole formation between overlapping regions to ensure precise electrical connections.

A semiconductor device design featuring a conductor layer formed on an insulation film within a substrate opening to increase contact area.

In-situ deposited protective conductive layer prevents oxidation and resolves interfacial delamination in copper pillar bump structures.

A coreless component carrier uses a seed layer portion on a first plating structure to form pillars with a second plating structure.

Cooling units occupy gaps between memory modules to dissipate heat via conduction, resolving temperature limits that restrict module density.

Asymmetric oval LED package directs 120-degree horizontal emission to reduce light wastage from elevated mounting positions.

Segmented dry etching reduces aspect ratios and accelerates via hole work time in silicon carbide substrates.

Relocating protrusion functions to chip pads resolves manufacturing complexity while maintaining solder thickness precision for downsized devices.