E-Fuse Floating Pattern for Semiconductor Integration
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Solution Overview
Problem
Conventional semiconductor devices with fuse structures face challenges in fabrication and programming, particularly in achieving increased integration and varied functional requirements as the electronics industry advances.
Innovation Solution
The semiconductor device incorporates an e-fuse structure with a floating pattern, a blocking dielectric pattern, and an e-fuse dielectric layer, where the floating pattern includes a metallic conductive material with a different work function than the e-fuse gate, allowing for improved integration and programming efficiency by storing charges in the floating pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional fuse structures are used, then the device can perform basic fuse functions, but the fabrication and programming processes are relatively difficult and integration is limited
Solution Approach 1:
The e-fuse gate is formed within a groove that extends into the substrate, nesting the gate structure within the substrate volume rather than placing it on the surface. This nested configuration allows for increased integration density while maintaining manageable fabrication processes by utilizing vertical space efficiently
Solution Approach 2:
The invention transitions from planar fuse structures to a three-dimensional configuration by forming the e-fuse gate vertically within a groove. This dimensional change enables better integration by utilizing the vertical dimension of the substrate, allowing multiple fuse structures to be packed more densely without increasing lateral footprint
2Productivity
If conventional fuse structures are used, then the device can store logic data, but programming efficiency is limited and expensive programming equipment is required
Solution Approach 1:
The invention replaces complex external programming equipment with an integrated charging electrode structure that can be formed using standard semiconductor fabrication processes. The charging electrode, positioned in proximity to the floating gate, enables direct electrical programming without requiring expensive external ion implantation or specialized programming equipment
Solution Approach 2:
The e-fuse structure includes self-contained components (charging electrode, floating gate, blocking dielectric) that enable the device to program itself using standard fabrication processes. The charging electrode can be used during subsequent manufacturing steps to program the fuse without requiring external programming equipment, making the system self-sufficient
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables enhanced integration and simplified programming of semiconductor devices, reducing the need for expensive programming equipment and improving yield by allowing reprogramming in case of errors.
Implementation Method 1
a floating pattern including a first portion between the e-fuse gate and the e-fuse active portion, and at least a pair of second portions extending upward along sidewalls of the e-fuse gate from both edges of the first portion
Data Source
AI summary
A semiconductor device includes: an e-fuse gate, a floating pattern between the e-fuse gate and an e-fuse active portion, a blocking dielectric pattern between the floating pattern and the e-fuse gate, and an e-fuse dielectric layer between the floating pattern and the e-fuse active portion. The floating pattern includes a first portion between the e-fuse gate and the e-fuse active portion and a pair of second portions extended upward along both sidewalls of the e-fuse gate from both edges of the first portion.