Transistor TRIZ Cases

A multilayer oxide semiconductor thin film transistor employs a surrounded channel structure with a thick first oxide layer and nested gate electrode.

Non-planar through electrode ends increase contact area to lower resistance between electrodes and plugs, enhancing light detection integration.

Low-k dielectric spacers prevent side oxide loss during fin reveal, maintaining uniform cavity depth for regular material filling.

A CMOS structure uses asymmetric gate electrodes to enhance high voltage resistance.

Self-aligned gate cutting with a dielectric isolation fin reduces spacing between active device areas, enabling more compact cell heights.

Detection circuit uses diode and resistor network to monitor drive signal voltage levels, preventing switching transistor overstress without expensive sensors.

A stacked image sensor pixel cell uses a reflective structure to redirect unabsorbed light back toward the photodiode for improved absorption.

A semiconductor device uses an opening slit in the light shield film to allow adhesive flow into recess portions of a photodiode.

Protection circuit shunts excessive currents via sensing transistors and resistors.

Segmented conductive plugs with selective oxidation spacers prevent undercutting and improve process margins in high-density semiconductor devices.

An e-fuse structure with a floating pattern improves integration density and programming efficiency by nesting the gate within the substrate.

Nesting a level-shift region within an isolation area reduces chip size while maintaining electrical isolation.

An asymmetric lightly doped profile reduces the channel length of a Power MOSFET, preventing undesirable dopant out-diffusion and lowering turn-on resistance.

Segmented floating gate transistors improve program efficiency by optimizing electron injection while managing device complexity through independent control.

A gate dielectric layer removal region offsets boundary effects in integrated circuit semiconductor devices.

A semiconductor device structure with optimized oxide layers and specific metal compositions.

Offset MIM capacitor plates allow via holes to punch through extension portions, simplifying etching by relaxing precision requirements on multiple materials.

A chrysene skeleton condensed with heteroaromatic rings increases molecular orbital overlap in organic thin-film transistors.

Nested spacers define air gaps between conductive patterns, reducing parasitic capacitance in dense semiconductor devices.

A floating body memory cell uses vertical segmentation and a bias gate to store electrical charges within isolated semiconductor regions.

A metal gate structure uses a sealing layer and etching back process to form self-aligned contacts adjacent to narrow gates.

Places n-channel and p-channel transistors on orthogonal silicon carbide faces to resolve low carrier mobility and manufacturing reliability trade-offs.

A sacrificial material layer stabilizes capacitor electrodes during deep etching to prevent structural toppling.

A non-volatile memory structure uses a third conductive layer covering a sharp tip to reduce programming voltage.

Vertical PNPN thyristors replace planar transistors to shrink cell size below 20 nm while maintaining data retention through negative differential resistance.

Integrates ESD protection within trench polysilicon to reduce mask count and manufacturing complexity.

Forming field oxide layers before implanting the device isolation diffusion region prevents lateral dopant diffusion and simplifies manufacturing complexity.

Metal silicide footers under transistor pedestals reduce wiring resistance, overcoming integration limits in high-density semiconductor constructions.

Metal gate trenches use distinct work function layers to define threshold voltages, resolving manufacturing complexity in multi-functional integrated circuits.

A TFT substrate integrates liquid crystal layers with patch electrodes to steer antenna beams.

Selective epitaxial growth of a silicon germanium film in a substrate recess forms the base of a heterojunction bipolar transistor.

Fin-shaped semiconductor material in the SCR structure lowers parasitic capacitance while maintaining signal integrity during electrostatic discharge events.

A MOS varactor cell layout separates gate and source-drain connections across distinct metal layers to eliminate fringing capacitance.

Dielectric-filled cavities within floating gates isolate adjacent conductive surfaces in NAND memory structures.

A buried gate memory structure uses storage node contacts surrounding three sidewalls of active regions to reduce contact resistance.

A semiconductor device uses a single level shift circuit to transmit set and reset signals via pulse modulation.

A semiconductor device uses distinct impurity concentration gradients in MOS capacitor electrodes to achieve high capacitance and low leakage current on a single substrate.

A switching device incorporates thicker gate insulating layers in the peripheral portion to alleviate electric field stress.

Integrates pixel arrays and peripheral logic on one semiconductor substrate to bypass microbump bonding limits, achieving sub-5 μm connection pitches.

A gate structure with silicide stressors and tensile capping layers applies mechanical force to transistor channels.

A stacked semiconductor device structure reduces parasitic capacitance through specialized insulating layers.

Bit line switch segments memory arrays to isolate leakage effects during power-up precharging operations.

A gate voltage magnitude compensation circuit balances series-connected power switch transistors using passive sampling and drive units.

A deposited oxide semiconductor nitride shield maintains stable carrier mobility and threshold voltage uniformity against atmospheric degradation.

Separated gate metal pads integrate clamp diodes outside edge termination regions to maintain device reliability.

A first insulation layer separates gate and source electrodes to reduce parasitic capacitance and eliminate flicker in display devices.

Clamping warped wafers against a UV transmitting plate ensures uniform irradiation, reducing processing time and preventing adhesive residue.

Implanted diffusion barriers reduce dopant mobility in modified areas, stabilizing channel length and lowering leakage current.

Silicon germanium oxide isolation structure blocks substrate current leakage in semiconductor devices.

Segmenting the active layer into low, medium, and high-speed films reduces electric leakage by ensuring passivation contact with high-quality interfaces.