Semiconductor Device Light Shield Slit Bubble Prevention

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Solution Overview

Problem

In CSP-type semiconductor devices with light receiving elements, the formation of bubbles in the adhesive layer within recess portions of the light receiving element due to high-speed rotation during attachment can lead to reduced light sensitivity and reliability issues, as the passivation silicon nitride film absorbs light and the recess portions are filled with epoxy resin.

Innovation Solution

A semiconductor device design featuring a recess portion on the light receiving element with an opening slit in the light shield film extending from the recess portion, allowing bubbles to be discharged and reducing stress in the adhesive layer, thereby preventing cracks and ensuring reliable attachment of the supporting substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high-speed rotation is used to attach the supporting substrate with epoxy resin, then attachment speed and productivity are improved, but bubbles are trapped in the recess portion of the light receiving element, reducing light sensitivity and reliability

Engineering Contradiction:
Improveattachment speedVSAvoidlight sensitivity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The light shield film is segmented by forming an opening slit that divides it into multiple portions. This segmentation allows the adhesive layer to be continuously supplied through the slit to the recess portion, preventing bubble entrapment while maintaining high-speed rotation attachment processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The opening slit in the light shield film acts as an intermediary channel that allows the adhesive material to reach the recess portion of the light receiving element. This mediator enables continuous adhesive supply during high-speed rotation, preventing bubble formation while maintaining attachment productivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Illumination intensity

If the passivation silicon nitride film is removed from the light receiving element region, then light sensitivity is improved, but the structural integrity and protection of the light receiving element are reduced

Engineering Contradiction:
Improvelight sensitivityVSAvoidstructural protection
Core Design Contradiction:
Illumination intensityVSStrength

Solution Approach 1:

The light shield film is removed only in the specific region of the recess portion where light needs to reach the light receiving element, while the rest of the film remains intact to provide structural protection. This local modification allows light sensitivity improvement without compromising overall structural integrity.

Inventive Principle:
Principle #3Local quality

3Strength

If the recess portion is filled with epoxy resin to attach the supporting substrate, then attachment strength is improved, but light sensitivity is reduced due to light absorption and bubble formation

Engineering Contradiction:
Improveattachment strengthVSAvoidlight sensitivity
Core Design Contradiction:
StrengthVSIllumination intensity

Solution Approach 1:

The light shield film is divided by the opening slit to create a pathway for adhesive supply. This segmentation allows the adhesive to fill the recess portion uniformly without trapping bubbles, achieving both strong attachment and maintained light sensitivity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The opening slit enables continuous supply of adhesive material to the recess portion during the attachment process. This continuous flow prevents bubble entrapment and ensures uniform adhesive distribution, maintaining both attachment strength and light sensitivity.

Inventive Principle:
Principle #20Continuity of useful action

Data Source

PatentUS8653529B2Semiconductor device and method of manufacturing the same
Publication Date: 2014.02.18 SEMICON COMPONENTS IND LLC
  • US8653529B2 patent drawing
  • US8653529B2 patent drawing
  • US8653529B2 patent drawing

AI summary

In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.