Oxide Semiconductor Nitride Protection Layer for TFT Stability
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Solution Overview
Problem
Oxide semiconductor materials in thin film transistors (TFTs) are prone to degradation due to moisture and oxygen exposure, leading to deteriorated electrical performance and reliability.
Innovation Solution
A semiconductor structure is developed where an oxide semiconductor nitride is formed as a protection layer over the oxide semiconductor material, using consecutive deposition with nitrogen gas introduction to shield the material from atmospheric effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor material is used in TFT, then carrier mobility and threshold voltage uniformity are improved, but electrical performance and reliability deteriorate due to moisture and oxygen exposure
Solution Approach 1:
An oxide semiconductor nitride layer is formed over the oxide semiconductor material to create a protective environment that isolates the material from harmful atmospheric factors such as moisture and oxygen. This inert barrier prevents degradation while preserving the material's superior electrical properties.
Solution Approach 2:
The structure combines oxide semiconductor material with oxide semiconductor nitride to form a composite system. The oxide semiconductor nitride serves as a protective layer that complements the functional oxide semiconductor material, providing both electrical performance and environmental stability.
2Ease of manufacture
If oxide semiconductor material is exposed to atmospheric environment, then device can be manufactured and operated, but electrical properties vary with time due to moisture and oxygen
Solution Approach 1:
The oxide semiconductor nitride protective layer is formed during the deposition process itself, before the device is exposed to the atmospheric environment. This preliminary protection prevents electrical property variation from the outset, allowing both easy manufacture and long-term stability.
3Reliability
If protection layer is added to oxide semiconductor material, then reliability is improved, but device complexity increases
Solution Approach 1:
The protective oxide semiconductor nitride layer is applied specifically to the oxide semiconductor material surface, providing localized protection only where needed. This targeted approach improves reliability without unnecessarily complicating the overall device structure.
Solution Approach 2:
The oxide semiconductor nitride layer is formed using the same deposition process as the oxide semiconductor material, creating a composite structure that can be manufactured in one process step. This reduces overall device complexity while providing the necessary protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxide semiconductor nitride effectively protects the material from moisture and oxygen, enhancing the electrical performance and reliability of the TFT by maintaining stable carrier mobility and threshold voltage uniformity.
Implementation Method 1
the oxide semiconductor nitride acts as the protection layer of the oxide semiconductor material, such that the semiconductor structure of which the oxide semiconductor material has the protection layer can have favorable reliability
Implementation Method 2
The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride above the oxide semiconductor material
Data Source
AI summary
A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.