E-Fuse Module Using Reference Transistors to Reduce IC Area
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electrically programmable fuse (e-fuse) modules in semiconductor devices require a large area for arrays of reference resistors used in generating adjustable programming currents, making them less compact.
Innovation Solution
A compact e-fuse module design utilizing a set of reference transistor elements and a current mirror configuration to generate a programming current, which is more area-efficient than traditional resistor arrays, allowing for sequential programming of e-fuse elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If an array of reference resistors is used to generate an adjustable reference current or voltage for the programming current generator, then the programming current can be controlled, but the area occupied on the IC increases undesirably
Solution Approach 1:
The patent changes the physical parameters of the reference element from a resistor (with resistance as the key parameter) to a transistor (with current gain beta as the key parameter). This parameter change allows the reference current to be generated through transistor current mirroring rather than voltage division across resistors, significantly reducing the area required while maintaining programming precision
Solution Approach 2:
The patent uses current mirror transistors to create copies of the reference current. By copying the reference current through matched transistor pairs, the system generates multiple adjustable current levels without requiring additional reference resistors, thereby reducing area while preserving the ability to control programming current
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compact design reduces the area occupied on the semiconductor chip while maintaining the ability to program e-fuse elements effectively, enhancing the integration density of e-fuse modules in semiconductor devices.
Implementation Method 1
An e-fuse module may be programmed by applying a relatively high current briefly to change the original resistance of selected e-fuse elements
Implementation Method 2
A compact e-fuse module design utilizing a set of reference transistor elements and a current mirror configuration to generate a programming current
Data Source
AI summary
A semiconductor device has an e-fuse module and a programming current generator. The e-fuse module includes an array of electrically programmable e-fuse elements. The programming current generator has a set of reference transistor elements, a selector for actuating the reference transistor elements to generate a selected reference current, and a current mirror for applying a programming current that is a function of the selected reference current to a selected e-fuse element of the array to program the resistance of the e-fuse element.