Electrical Contacts via Selective Silicon Nitride Etching
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Solution Overview
Problem
Existing methods for producing photovoltaic cells involve high temperatures and the use of masks, which can damage components and are inefficient, particularly in the removal of silicon nitride layers for electrical contact formation.
Innovation Solution
A method using a basic material, such as sodium hydroxide or potassium tert-butoxide, is applied to selectively remove portions of a silicon nitride layer on a substrate at low temperatures (less than 300°C) without the need for masks, allowing for the exposure of the substrate and subsequent electrical coupling, facilitated by ink jet printing technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high temperature processing is used to remove silicon nitride layers, then the removal efficiency is improved, but component damage increases and manufacturing complexity increases
Solution Approach 1:
The patent changes the chemical parameter by using a basic material (such as sodium hydroxide or potassium tert-butoxide) instead of high temperature thermal processing. This chemical etching approach removes silicon nitride layers at lower temperatures, maintaining removal efficiency while eliminating the harmful thermal effects that cause component damage.
Solution Approach 2:
The patent replaces the thermal-mechanical removal process with a chemical etching process. Instead of using high temperature thermal fields to remove the silicon nitride layer, a basic chemical material is applied to selectively etch the layer, substituting a chemical mechanism for a thermal-mechanical one and thereby reducing component damage.
2Manufacturing precision
If masks are used in the removal process, then manufacturing precision is improved, but device complexity and manufacturing time increase
Solution Approach 1:
The basic material solution inherently provides self-alignment and self-limitation properties. The etching process automatically stops at the substrate interface due to the fundamental difference in chemical reactivity between silicon nitride and the underlying substrate, eliminating the need for external masking structures and reducing process complexity while maintaining precision.
Solution Approach 2:
The basic material acts as a selective intermediary that chemically interacts with the silicon nitride layer but not with the underlying substrate. This selective chemical interaction serves as a natural barrier and definition mechanism, replacing the physical masking function while simplifying the overall device structure and process steps.
3Manufacturing precision
If masks are used for electrical contact formation, then manufacturing precision is improved, but loss of time and productivity decrease
Solution Approach 1:
The patent extracts and eliminates the masking step from the manufacturing process entirely. By using a basic material that selectively removes only the silicon nitride layer through chemical etching, the process achieves the desired electrical contact formation without requiring the time-consuming application, alignment, and removal of physical masks, thereby reducing manufacturing cycle time while maintaining precision.
Solution Approach 2:
The chemical etching process using basic material continues uniformly across the substrate surface until the silicon nitride layer is completely removed at the contacted areas. This continuous chemical action replaces the discontinuous steps of mask application, pattern transfer, and mask removal, eliminating idle time and maintaining productive action throughout the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of photovoltaic cells with improved efficiency and reduced component damage by eliminating high-temperature processing and masking steps, allowing for simpler and more precise electrical contact formation.
Implementation Method 1
exposing the silicon nitride layer to an effective amount of a basic material to remove at least a portion of the disposed silicon nitride layer
Implementation Method 2
heating the basic material to a temperature effective to promote a reaction between the basic material and the deposited layer
Implementation Method 3
heating the basic material to a temperature effective to promote a reaction between the basic material and the deposited layer
Data Source
AI summary
Certain embodiments are directed to methods, devices and systems designed to remove selected portions of a material to expose an underlying material or substrate. One or more electrical components may be coupled to the underlying substrate through an electrical contact. Kits and systems for producing electrical contacts are also provided.