Electrode Adhesion Layer Design for Semiconductor Mounting
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Solution Overview
Problem
During the mounting of semiconductor elements, the diffusion of bonding members into the metal layer can lead to reduced adhesion and detachment of the insulating layer, potentially disabling light emission.
Innovation Solution
A semiconductor element design featuring an electrode with a first upper surface and a second upper surface, where the adhesion layer is positioned on the first upper surface, spaced apart from the second upper surface, and an insulating layer covers from the adhesion layer to the semiconductor layer, with the second upper surface exposed for bonding, preventing diffusion into the adhesion layer and maintaining electrode integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the metal layer is used as the bonding surface for mounting, then the bonding member can be directly attached to the electrode, but the bonding member diffuses into the metal layer at high temperature, reducing adhesion
Solution Approach 1:
The electrode is divided into two distinct surfaces: a first upper surface for electrical connection and a second upper surface for bonding. This segmentation allows each surface to serve its specific function independently, preventing diffusion while maintaining bonding capability.
Solution Approach 2:
The patent applies different properties to different parts of the electrode structure. The first upper surface maintains metal properties for electrical conduction, while the second upper surface is configured to resist diffusion bonding. The adhesion layer is selectively positioned only on the first upper surface, creating local quality differentiation.
2Reliability
If the adhesion layer is disposed on the electrode surface, then the insulating layer adheres well to the electrode, but the bonding member can diffuse into the adhesion layer through the metal layer, causing detachment
Solution Approach 1:
The second upper surface of the electrode acts as an intermediary barrier between the bonding member and the adhesion layer. This intermediate structure prevents direct contact and diffusion pathways, allowing the adhesion layer to maintain its bonding function without being compromised by diffusion.
Solution Approach 2:
The patent introduces a vertical dimension to the electrode structure by creating a second upper surface that protrudes or is positioned at a different height than the first upper surface. This dimensional change creates a physical barrier that blocks the horizontal diffusion path of bonding members into the adhesion layer.
3Object-affected harmful factors
If the insulating layer covers the entire electrode, then the semiconductor layer is protected, but the bonding member can enter through detached portions, disabling light emission
Solution Approach 1:
The patent performs preliminary action by configuring the electrode with a diffusion-resistant second upper surface before the bonding process. This pre-configured structure prevents diffusion from occurring in the first place, eliminating the need for additional protective measures and ensuring light emission functionality is maintained.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces the diffusion of bonding members into the adhesion layer and prevents electrode detachment, ensuring reliable adhesion and light emission of the semiconductor element.
Implementation Method 1
the adhesion layer is disposed on the first upper surface of the electrode spaced apart from the second upper surface which will be in contact with the bonding member, so that diffusion of the bonding member into the adhesion layer can be reduced
Data Source
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AI summary
A semiconductor element includes a semiconductor layer (20), an electrode (30), an adhesion layer (40), and an insulating layer (60). The electrode is disposed over the semiconductor layer and has a first upper surface (32a,32b) and a second upper surface (34a,34b) disposed further away from the semiconductor layer than the first upper surface. The adhesion layer is disposed on the first upper surface of the electrode so that the second upper surface of the electrode is disposed further away from the semiconductor layer than an upper surface of the adhesion layer. The insulating layer covers the upper surface of the adhesion layer and the semiconductor layer.