Semiconductor/Solid-State Device Details TRIZ Cases

Spacing of at least 100 μm between connecting holes and the first edge extends the water vapor path length, protecting metal patterns from erosion.

Segmented heating anvils index substrates across independent thermal zones, preventing internal damage from inconsistent pre-bond and post-bond heating times.

Dielectric nitride scaffolding supports access lines within high aspect ratio trenches to maintain structural integrity during fabrication.

A trench capacitor structure forms high-density capacitance using existing substrate contact process flows.

Welded metal upper and lower parts with edge reinforcement prevent pressure deformation, ensuring stable heat dissipation for the CPU.

A semiconductor package uses a non-curing thermal conductive liquid coolant with nanometer-sized particles to dissipate heat from the flip chip die.

Silicon carrier substrate with through-silicon-vias bonds to circuit dies using dielectric-dielectric joining for high-density integration.

A configurable capacitance device uses a separate interconnect structure to electrically couple integrally formed capacitors in parallel.

Cavity terminals extend vertically from the encapsulation to provide high density interconnects while maintaining reliability in miniaturized packages.

A segmented electrode surface isolates the adhesion layer from bonding members, preventing diffusion and maintaining insulating layer adhesion.

A temperature-controlled adhesive layer enables precise Micro-LED die transfer via reversible stickiness.

Segmenting the waveguide into layered structures and using self-service molding eliminates complex machining, reducing manufacturing cost.

A metal capacitor uses alternating wide and narrow segments to maintain high capacitance density.

A control layer retards copper and tin diffusion between a conductive pillar and solder crown, preventing brittle intermetallic compound formation.

Merging base plates onto shared pipes reduces pipe joints and leakage risk while maintaining efficient thermal management.

Integrated circuit substrate with connection substrate cavity nests controller and buffer chips to reduce SSD package size.

A co-extruded microchannel heat pipe forms a composite pipe body with side walls and an upper wall to encapsulate working fluid.

Flared pedestal structures shield embedded conductive lines from etching exposure during BEOL patterning, eliminating metal particle re-deposition on sidewalls.

Scaffolding supports via hardmasks to prevent pattern collapse during recessing, ensuring accurate self-aligned top vias.

Separate power supply regulators isolate output circuit noise from temperature compensation, ensuring accurate frequency stability.

Porous air gaps within the liner reduce effective permittivity, cutting RC delay in miniaturized vertical interconnects.

Segmenting assembly from embedding eliminates lamination equipment costs and protects components during milling.

A semiconductor device design incorporating a dielectric layer with a hollow recess area to decouple the capping-barrier interface from the passivation top surface.

A stacked semiconductor package integrates a decoupling capacitor on the memory die to enhance power delivery without increasing lateral footprint.

A packaged electronic module integrates components into a single unit for embedding.

Silicon release layer prevents desmear solution infiltration, maintaining adhesion strength while reducing total sheet thickness.

Automated optical measurement replaces manual scanning electron microscopy, eliminating user intervention and improving productivity.

Uniform nanoscale pores in composite dielectrics block chemical penetration, reducing plasma damage and preserving signal speed.

An adhesion modification layer enhances bonding force between device and carrier substrates in flexible semiconductor fabrication.

Segmenting RDL pads with a notch enables connector overhang, reducing die size while maintaining electrical isolation between nets.

Segmented polymer layers with embedded heat dissipating elements reduce size while mitigating electromagnetic interference.

Rounded corner vias prevent metal bulging and divot formation during deposition, ensuring complete passivation coverage.

Multi-layer metal composite bonding pads extend through interconnect structures to prevent peeling defects in thin CMOS image sensor devices.

Localized metallic segregation improves electromigration resistance in copper wires without increasing wiring resistance.

A semiconductor wafer features a stepped back surface to facilitate compact packaging and air seal formation.

Hydrogen plasma and high-pressure annealing repair microvoids in liner and capping layers, resolving metal diffusion into dielectric materials.

Segmented traces on multiple metal layers rotate signal paths to neutralize high-frequency magnetic flux penetration without increasing shield thickness.

Paste dipping embeds conductive bumps in flux to prevent misalignment and eliminate de-flux steps.

A low creep plastic mounting device secures semiconductor packages while providing direct openings for temperature sensors.

Segmented vacuum zones control bond wave propagation to eliminate voids and prevent deformation in thin semiconductor dies.

Hydrophobic sidewall structures repel solder creepage, preventing contamination of semiconductor chip active regions.

A photosensitive epoxy resin adhesive composition combines distinct epoxy resins with a photo-acid generator to form precise patterns.

Carrier wafer bonding isolates singulation from stacking to prevent cumulative defects and boost yield.

Segmented splice interposers with varying height pillars connect semiconductor dies, reducing large interposer size while maintaining high interconnect density.

An adhesive layer with controlled thixotropy embeds semiconductor elements directly onto substrates.

Staggered metal and insulating protrusions create a defined pathway cavity that prevents lateral bridging during high-density electroless copper bonding.

Deep ion implants replace complex etch-and-fill processes, reducing die area penalties while maintaining reliable in-process charging protection.

Aperture filled with resin protects low-k insulating film from chipping and cracking during blade dicing separation of semiconductor wafers.

Sequential buildup layer formation on asymmetric electronic substrates reduces warping and material costs by avoiding repeated desmearing.

Pre-bends semiconductor substrates using dual curved bending tools to match base plate deflection profiles.

A bimetal lid structure accommodates organic substrate warpage to reduce thermal stress on the thermal interface material.

Redistribution structures enable fan-out beyond interposer edges to resolve I/O pad density limits in 3D integrated circuits.

Alternating ablation layers form geometric features that align optical fiber and die, eliminating mirrors and reducing signal loss.

Patterned stress films and controlled vertical pins compensate for wafer deformation to ensure precise metal pad alignment.

Segmented air vents at cavity corners discharge trapped gas, preventing void formation and enhancing mounting strength.

Segmenting the internal support column creates separate flow paths that reduce pressure loss and improve heat transport efficiency.

Molded ceramic layers in multilayer back plates boost stiffness by 50% while preventing bending from semiconductor loading forces.

A chip-packaging module mounts a sensor chip on a carrier while leaving the input portion exposed for signal reception.

Directly forming metal interconnects in a laser-activated mold compound eliminates lead frames to reduce parasitic electrical effects.

A semiconductor device uses stacked contact plugs to connect interconnections at different vertical levels.

A method embeds a die and interposer chipset into a substrate window using encapsulant to form high density electronic modules.

Anisotropic thermal guiding coatings direct heat flow through spatially varying conductivity layers.

A semiconductor package structure uses a conductive supporting sheet to electrically connect transistor electrodes within a cavity.

A bottom-up gas phase deposition process fills recessed features with low resistivity metals.

A heat conduction device with a recessed hollow column body increases radiating surface area.

Common wiring connects multiple connection pads to columnar electrodes, distributing current load to prevent burning at narrow line widths.

Integrating the inductor within the power device package eliminates discrete components, reducing printed circuit board space while maintaining high inductance.

Concave organic filling portions absorb tensile stress within inorganic layer recesses, preventing film detachment and cracking.

Through electrodes connect Al pads via Cu plating to enable compact flip-chip assembly.

Dual-sided heat dissipation paths in a semiconductor module cut thermal resistance by 22% while preventing thermal deformation.

Vertical stacking of transistor layers overcomes 2D wire pitch reliability limits while maintaining manufacturing efficiency through segmented wafer processing.

A semiconductor package integrates an electromagnetic shielding layer and a thermal discharge layer within a mold via hole to manage heat and interference.

Back-side access processes split the superstructure, spacing inductors from the handle wafer to minimize electromagnetic coupling and improve the Q factor.

A bonding pad via connects conductive layers through an insulation barrier to isolate metal from moisture.

Patterned backside metallization trenches reduce layer modulus to match substrate expansion during thermal cycling.

A semiconductor overlay vernier forms on a substrate by etching a step and maintaining its shape with a hard mask stack.

An asymmetric connection structure mitigates delamination risks caused by coefficient of thermal expansion mismatch during thermal cycles.

Localized attachment of a high-conductivity sheet reduces heat resistance, enhancing radiation efficiency.

Coating with a silane underlayer ensures complete oxidation in deep trenches, reducing cracks caused by volume shrinkage.

Silicon interposers enable 3D stacking of chips, reducing substrate area and preventing warpage from CTE mismatch.

A semiconductor package joins the encapsulant with a roughened first conductive layer, resolving weak adhesion that degrades EMI shielding and heat dissipation.

A heat sink positioned above backside wire bonds in a multi-chip module structure conducts thermal energy away from semiconductor chips.

Protrusions and recesses on the intermediate stage reduce contact area to prevent foreign substance absorption and die cling.

A semiconductor device uses small-amplitude differential signaling to transfer data between stacked chips via through-silicon vias.

Integrates an external pump directly with a water-cooling head assembly to streamline fluid circulation paths.

Roughening patterns on the insulating layer increase surface area around circuit patterns to block adhesive bubbles.

Laser drilling a narrow through hole in insulating layers eliminates manufacturing defects and sidewall step differences during through electrode formation.

A chip module uses a fiber-reinforced cover layer to sandwich the chip unit and form a stiffening bridge between the substrate and lateral edges.

Soft-lithography forms conductive wiring on the chip pad without photolithography, reducing manufacturing complexity and cost.

A barrier structure surrounds electrical connections in stacked semiconductor packages to isolate conductive terminals from surrounding materials.

Protruding features on a top metal frame penetrate apertures in a bottom frame portion to prevent solder ball detachment caused by warpage during reflow.

An interleaved lead frame prevents electrical shorts by holding inner leads in a single plane while outer leads shift vertically.

A power module uses an L-shaped stress buffering layer to connect a leadframe to a semiconductor device.

Aligning graphite nanofibers via magnetic fields creates directional heat paths that reduce thermal resistance in three-dimensional chip stacks.

A heat radiator uses stacked pin fin units to expand the surface area available for cooling fluid contact.

A substrate-free SIP module uses a penetrable film layer and shielding to mount semiconductor dies directly on encapsulant.

A vehicle control device uses a heat radiation material between an electronic component and a metal housing to manage thermal performance.

Segmented pitch regions in the interposer increase module-to-board I/O density without expanding the package footprint or requiring finer PCB fabrication.