Semiconductor Through Electrode via Narrow Laser Drilled Insulating Via
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Solution Overview
Problem
The manufacturing of through electrodes in semiconductor devices often results in defects, particularly due to the complexity of forming connections between pad electrodes, which hinders size and weight reduction in semiconductor packaging.
Innovation Solution
A semiconductor device and method involving a semiconductor substrate with insulating layers and conductive pads, where a through hole with a narrower width than the apertures is formed using a laser drill or photolithography method, allowing a through electrode to be placed without etching metal layers, thus simplifying the process and minimizing step differences in the sidewalls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to form through electrodes by etching metal layers, then connections between pad electrodes can be established, but manufacturing defects occur and the process becomes complex
Solution Approach 1:
The patent extracts the through hole formation process from the metal layer etching process. Instead of etching through metal layers to create through electrodes, the invention forms through holes through insulating layers only, using laser drilling or photolithography. This separation of processes eliminates the complexity and defects associated with metal layer etching while maintaining the electrical connection function through the conductive paste and pad electrode structure.
Solution Approach 2:
The patent applies preliminary action by forming the through holes in the insulating layers before forming the metal layers. The conductive paste is then filled into these pre-formed through holes, and metal layers are deposited afterward. This sequence prevents manufacturing defects that would occur if through holes were formed after metal deposition, as the insulating layers are more suitable for clean hole formation and filling.
2Ease of manufacture
If through electrodes are formed by etching metal layers, then electrical connections can be made, but the process requires multiple steps and causes manufacturing defects
Solution Approach 1:
The patent replaces the mechanical/chemical etching process with laser drilling or photolithography methods. These alternative techniques can form through holes more efficiently and with fewer defects. The laser drilling method, in particular, provides precise, clean holes through insulating layers without the complexity of multiple etching steps required for metal layers, thereby improving both ease of manufacture and productivity.
3Manufacturing precision
If conventional through electrode formation is used, then pad electrodes can be connected, but sidewall step differences increase and etching uniformity decreases
Solution Approach 1:
The patent applies local quality by forming through holes specifically in the insulating layers rather than through the entire metal-insulating structure. The insulating layers provide a uniform, consistent material structure that produces smooth sidewalls and uniform etching characteristics. This localized approach to hole formation in the insulating layer portion improves manufacturing precision and sidewall quality compared to etching through varying metal thicknesses.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach eliminates manufacturing defects by simplifying the formation of through electrodes, enabling more efficient integration of structures and reducing the size and weight of semiconductor packages while maintaining smooth sidewalls for better etching uniformity.
Implementation Method 1
a through hole with a width narrower than a width of the first aperture and narrower than a width of the second aperture, penetrating through the first and second insulating layers
Implementation Method 2
formed using a laser drill or photolithography method
Data Source
AI summary
A semiconductor device having a through electrode and a method of fabricating the same are disclosed. In one embodiment, a semiconductor device includes a first insulating layer formed on a semiconductor substrate. A wiring layer having a first aperture to expose a portion of the first insulating layer is formed on the first insulating layer. A second insulating layer is formed on an upper portion of the wiring layer and in the first aperture. A conductive pad having a second aperture to expose a portion of the second insulating layer is formed on the second insulating layer. A through hole with a width narrower than widths of the first and second apertures is formed through the first and second insulating layers and an upper portion of the semiconductor substrate. A through electrode is formed in the through hole.