Semiconductor Interconnect Formation via High-Pressure Anneal
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Solution Overview
Problem
As semiconductor devices undergo thermal treatments for annealing and high-pressure processes, voids can form and diffuse through layers, leading to reduced efficiency and reliability due to metal diffusion into dielectric layers, which necessitates controlling the thermal budget and minimizing annealing treatments.
Innovation Solution
Implementing a high-pressure anneal (HPA) with hydrogen at controlled temperatures and pressures to repair deformities and remove impurities, and using hydrogen and ammonia plasma treatments, along with soak treatments, to reduce microvoids and impurities in barrier and capping layers, thereby improving layer adherence and conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal treatments for annealing are performed, then layer adherence and material properties are improved, but voids form and diffuse through layers causing metal diffusion into dielectric layers
Solution Approach 1:
The patent changes the parameters of the annealing process by performing it at low temperature (e.g., below 200°C) and high pressure (e.g., above 1 atmosphere) conditions. This parameter transformation allows the annealing process to improve layer adherence while minimizing void formation and metal diffusion that typically occur at high temperatures.
Solution Approach 2:
The patent utilizes the phase transition properties of materials under high pressure conditions. By applying high pressure during low-temperature annealing, the process achieves material densification and defect repair without reaching temperatures that would cause excessive void formation and metal diffusion into dielectric layers.
2Reliability
If high-pressure anneal with hydrogen is performed, then impurities are removed and layer adherence is improved, but process complexity increases
Solution Approach 1:
The patent introduces hydrogen as an intermediary substance during the low-temperature annealing process. The hydrogen atmosphere serves as a mediator that facilitates impurity removal and layer adherence improvement without requiring high temperatures, thereby managing process complexity while achieving reliability enhancements.
3Manufacturing precision
If minimum feature size is reduced to improve integration density, then more components are integrated into given area, but additional problems arise requiring additional process steps
Solution Approach 1:
The patent applies parameter changes by using low-temperature, high-pressure conditions for annealing processes. This approach addresses the additional problems that arise from reduced minimum feature sizes without requiring additional process steps, as the modified annealing conditions can simultaneously handle multiple issues associated with high-density integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The HPA and plasma treatments effectively reduce voids and impurities, enhancing the reliability and performance of semiconductor devices by stabilizing layers and preventing defects from disrupting neighboring features, thus improving the overall thermal budget management.
Implementation Method 1
performing a first hydrogen plasma treatment on the liner layer
Implementation Method 2
performing a first hydrogen soak treatment on the liner layer
Implementation Method 3
performing a first hydrogen soak treatment on the liner layer
Implementation Method 4
repair deformities and remove impurities
Implementation Method 5
performing a first hydrogen soak treatment on the liner layer
Implementation Method 6
reduce microvoids and impurities
Implementation Method 7
depositing a metal film over the liner layer
Data Source
AI summary
A method of forming a semiconductor device includes patterning a dielectric layer to form a groove and depositing a plurality of conductive layers over the dielectric layer and in the groove. The first conductive layer is a liner layer, the second conductive layer is a metal film, and the third conductive layer is a capping layer. The first conductive layer is treated with a hydrogen plasma treatment to remove impurities. The first conductive layer is also treated with a hydrogen soak treatment to remove microvoids. The third conductive layer is treated with an ammonia plasma treatment to remove impurities. The third conductive layer is also treated with a hydrogen plasma treatment to remove additional impurities. The third conductive layer is also treated with a hydrogen soak treatment to remove microvoids.