Semiconductor Package Barrier Structure for Contamination Prevention

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor packages face contamination issues due to molding materials entering the electrical connection area, which affects reliability and is challenging to address while meeting miniaturization requirements.

Innovation Solution

A semiconductor package design featuring a barrier structure adjacent to the electrical connection area of the first substrate, which prevents molding materials and fillers from reaching the electrical connections by surrounding the connection area, combined with a molding layer that encapsulates the conductive terminals and electronic components without covering the barrier.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a molding process is performed to encapsulate stacked semiconductor substrates, then the substrates are protected and encapsulated, but contaminants from the molding material enter the electrical connection area

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidcontamination from molding material
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A barrier structure is introduced as an intermediary element between the molding material and the electrical connection area. This barrier structure prevents direct contact between the molding compound and the electrical connections, thereby eliminating contamination while maintaining the protective encapsulation function.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrical connection area is segmented from the rest of the package by introducing a barrier structure that divides the internal space. This segmentation isolates the sensitive electrical connections from the molding material, allowing the molding process to proceed without contamination risk.

Inventive Principle:
Principle #1Segmentation

2Volume of moving object

If the package size is reduced to meet miniaturization requirements, then the package becomes more compact, but the electrical connection area becomes more vulnerable to contamination

Engineering Contradiction:
Improvepackage volumeVSAvoidcontamination risk
Core Design Contradiction:
Volume of moving objectVSObject-affected harmful factors

Solution Approach 1:

The barrier structure is nested within the package cavity, forming a concentric arrangement where the barrier surrounds the electrical connection area. This nested configuration provides protection without adding external volume, enabling miniaturization while maintaining contamination prevention.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The barrier structure utilizes the vertical dimension by extending from the first substrate toward the second substrate, creating a three-dimensional protective barrier. This vertical arrangement provides effective contamination prevention without increasing the planar footprint of the package.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11443997B2Semiconductor package and method of manufacturing the same
Publication Date: 2022.09.13 ADVANCED SEMICON ENG INC
  • US11443997B2 patent drawing
  • US11443997B2 patent drawing
  • US11443997B2 patent drawing

AI summary

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a first substrate, a second substrate, and a barrier structure. The first substrate has a first surface and a second surface opposite to the first surface. The second substrate has a first surface facing the second surface of the first substrate. The first substrate electrically bonds to the second substrate through a conductive terminal disposed between the second surface of the first substrate and the first surface of the second substrate. The barrier structure is disposed adjacent to the first surface of the first substrate.