Semiconductor Package Structure for Cascade Circuits
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Solution Overview
Problem
Current semiconductor package structures using cascade circuits for gallium nitride power devices suffer from high parasitic inductance and parasitic resistance due to wire connections, which hinder high-frequency and high-speed performance.
Innovation Solution
A semiconductor package structure that minimizes parasitic inductance and resistance by using a supporting sheet to electrically connect the source electrode of the high-voltage depletion type transistor and the drain electrode of the low-voltage enhancement type transistor, eliminating the need for wires and incorporating capacitive and resistive elements to reduce electromagnetic interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wire connections are used to connect electrodes in cascade circuits, then ease of assembly is improved, but parasitic inductance and parasitic resistance increase
Solution Approach 1:
The patent introduces a supporting sheet as an intermediary component to replace wire connections. The supporting sheet has a conductive surface that electrically connects the source electrode of the high-voltage depletion type transistor and the drain electrode of the low-voltage enhancement type transistor, eliminating the need for wires and thereby reducing parasitic inductance and resistance while maintaining ease of assembly.
Solution Approach 2:
The patent replaces the mechanical wire connection system with a supporting sheet-based electrical connection system. The supporting sheet with its conductive surface provides a more efficient electrical pathway compared to wire connections, reducing parasitic effects while simplifying the assembly process through a single integrated component.
2Ease of manufacture
If wire connections are used for interconnection, then device assembly is simplified, but switching speed decreases
Solution Approach 1:
The supporting sheet acts as an intermediary that provides a low-inductance, low-resistance electrical connection path between the transistor electrodes. This eliminates the parasitic effects of wire connections that limit switching speed, while the supporting sheet's integrated design maintains assembly simplicity.
Solution Approach 2:
The patent extracts the parasitic inductance and resistance from the connection system by removing wire connections entirely. The supporting sheet provides a direct electrical connection that eliminates the intermediate wire element, thereby improving switching speed while keeping the assembly process simple through the supporting sheet's integrated structure.
Data Source
AI summary
A semiconductor package structure comprises: a high-voltage depletion type semiconductor transistor comprising a source electrode, a gate electrode and a drain electrode; a low-voltage enhancement type semiconductor transistor comprising a source electrode, a gate electrode and a drain electrode; a shell comprising a cavity for receiving the high-voltage depletion type semiconductor transistor and the low-voltage enhancement type semiconductor transistor, and a high-voltage terminal, a first low-voltage terminal and a second low-voltage terminal; and cascade circuits comprising a supporting sheet having a conductive surface. The source electrode of the high-voltage depletion type transistor and the drain electrode of the low-voltage enhancement type semiconductor transistor are fixed to the conductive surface of the supporting sheet and electrically connected to each other through the conductive surface of the supporting sheet. A side of the supporting sheet away from the conductive surface is fixed to the cavity of the shell.