Semiconductor Electrode Lattice Spacing Warping
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Solution Overview
Problem
The warping of a substrate due to a metal layer with a higher coefficient of linear expansion than the film on which it is formed can cause the substrate to become convex, leading to manufacturing issues in semiconductor devices.
Innovation Solution
Introducing impurity atoms into the electrode material layers to increase the lattice spacing, thereby adjusting the stress applied to the substrate and reducing warping by creating a concentration gradient that narrows the high impurity atom region, which helps in suppressing substrate warping and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a metal layer is formed in a concave portion on a substrate, then the metal layer can be embedded effectively, but the substrate may warp into a downwardly convex shape due to coefficient of linear expansion mismatch
Solution Approach 1:
The patent introduces impurity atoms into the metal layer to change its physical parameters, specifically increasing lattice spacing between metal atoms. This parameter change adjusts the coefficient of linear expansion of the metal layer to better match that of the surrounding film, thereby reducing thermal expansion mismatch and preventing substrate warping while maintaining effective embedding in the concave portion
Solution Approach 2:
The patent creates a concentration gradient of impurity atoms within the metal layer, with higher impurity concentration in specific regions. This local quality variation allows different portions of the metal layer to have different lattice spacing and stress characteristics, enabling precise control over substrate warping while maintaining good embedding in the concave portion
2Shape
If impurity atoms are introduced into electrode material layers to adjust stress and reduce warping, then substrate flatness is improved, but resistance may increase
Solution Approach 1:
The patent carefully controls the type, concentration, and distribution of impurity atoms to achieve optimal parameter changes. By selecting specific impurity elements and controlling their concentration within precise ranges, the patent adjusts lattice spacing to reduce warping while minimizing the negative impact on electrical resistance, maintaining resistance at or below 1.1 times the original value
Solution Approach 2:
The patent employs a concentration gradient distribution of impurity atoms rather than uniform distribution. This local quality variation ensures that regions with higher impurity concentration (which provide stress adjustment) are optimized for warping control, while other regions maintain better electrical conductivity, thus balancing warping suppression with resistance control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of impurity atoms into the electrode material layers effectively adjusts the stress on the substrate, reducing warping and maintaining resistance at or below 1.1 times the original resistance, while ensuring the substrate remains flat.
Implementation Method 1
lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms
Implementation Method 2
adjusting the stress applied to the substrate and reducing warping
Implementation Method 3
creating a concentration gradient that narrows the high impurity atom region
Data Source
AI summary
In one embodiment, a semiconductor device includes a substrate, and a plurality of insulating layers provided on the substrate. The device further includes a plurality of electrode layers provided on the substrate alternately with the plurality of insulating layers and including metal atoms and impurity atoms different from the metal atoms, lattice spacing between the metal atoms in the electrode layers being greater than lattice spacing between the metal atoms in an elemental substance of the metal atoms.