Electrolytic Processing Unit for Semiconductor Plating
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Solution Overview
Problem
Conventional semiconductor manufacturing apparatuses require large-scale ultrasonic agitating devices for plating processing, which can be impractical due to configuration limitations, affecting the uniformity and efficiency of the process.
Innovation Solution
A manufacturing apparatus with a substrate holding unit, processing liquid supply, and an electrolytic processing unit that uses direct and indirect electrodes to form electric fields, allowing for the controlled movement and oxidation/reduction of ions on the substrate surface without the need for a large-scale agitating device, ensuring uniform electrolytic processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a large-scale ultrasonic agitating device is used to agitate the plating liquid, then the uniformity of plating processing is improved, but the apparatus configuration becomes complex and space-consuming
Solution Approach 1:
The patent replaces the mechanical ultrasonic agitating device with an electric field-based ion transport system. The indirect electrode generates an electric field that drives ion movement, eliminating the need for mechanical agitation equipment while achieving uniform plating distribution.
Solution Approach 2:
The patent extracts the essential function of liquid agitation from the ultrasonic device and implements it separately through electric field-driven ion transport. The indirect electrode system independently handles ion distribution, separating the agitation function from the plating electrode system.
2Stability of the object's composition
If a large-scale ultrasonic agitating device is installed, then ion distribution uniformity is improved, but the available space in the apparatus is reduced
Solution Approach 1:
The patent substitutes mechanical agitation with an electric field-based ion transport mechanism. The indirect electrode creates an electric field that moves ions uniformly without requiring physical agitation equipment, thereby preserving apparatus space.
Solution Approach 2:
The patent changes the method of ion transport from mechanical agitation to electric field-driven movement. By applying voltage to the indirect electrode, ions are moved through the plating liquid in a controlled manner, achieving uniform distribution without occupying additional space.
3Device complexity
If conventional plating processing is performed without ion aggregation, then the apparatus is simpler, but the plating uniformity deteriorates
Solution Approach 1:
The patent introduces an indirect electrode as an intermediary component that generates an electric field to aggregate ions before they reach the plating electrode. This intermediary system improves plating uniformity while adding minimal structural complexity compared to large-scale agitation devices.
Solution Approach 2:
The patent replaces mechanical ion agitation with an electric field-based ion aggregation system. The indirect electrode uses electrical forces to concentrate and distribute ions uniformly, achieving better plating quality with a simpler apparatus structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and uniform electrolytic processing of semiconductor devices, simplifying the apparatus configuration and improving the plating uniformity without requiring a large-scale agitating device, thus enhancing manufacturing efficiency.
Implementation Method 1
an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate
Implementation Method 2
If the electric field (electrostatic field) is formed by applying the voltage to the indirect electrode, negatively charged particles are gathered at a side of the electrolytic processing unit (the indirect electrode and the direct electrode), and the processing target ions are moved to a side of the substrate
Implementation Method 3
by applying a voltage while using the direct electrode as an anode and the substrate as a cathode, electric current is flow between the direct electrode and the substrate. As a result, charges of the processing target ions moved to the substrate side are exchanged, so that the processing target ions are reduced
Implementation Method 4
the charges of the processing target ions moved to the substrate side are exchanged, so that the processing target ions are reduced
Implementation Method 5
the charges of the processing target ions moved to the substrate side are exchanged, so that the processing target ions are reduced
Data Source
AI summary
A manufacturing apparatus for a semiconductor device includes a substrate holding unit configured to hold a substrate; a processing liquid supply unit configured to supply a processing liquid onto the substrate held by the substrate holding unit; an electrolytic processing unit disposed to face the substrate holding unit and configured to perform an electrolytic processing on the substrate held by the substrate holding unit; and a terminal configured to apply a voltage to the substrate. The electrolytic processing unit includes a direct electrode configured to be brought into contact with the processing liquid supplied onto the substrate to apply a voltage with respect to the substrate; and an indirect electrode configured to form an electric field in the processing liquid supplied onto the substrate.