Electron-Beam EUV Source With Carbon Emitters for Compact Lithography
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Solution Overview
Problem
Current EUV lithography equipment is expensive, complex, and occupies a large volume, relying on high-power lasers.
Innovation Solution
An extreme-ultraviolet light source device utilizing a carbon-based electron beam-emitting unit and a metal radiator in a vacuum discharge chamber, generating EUV radiation through plasma, replacing the need for lasers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If high-power lasers are used for EUV lithography, then EUV radiation can be generated, but the device becomes expensive, complex, and occupies a large volume
Solution Approach 1:
The patent replaces the laser-based optical system with an electron beam-based system. Instead of using high-power lasers to generate plasma, the invention uses electron beams emitted from a cathode to ionize metal vapor and generate EUV radiation. This substitution of the excitation mechanism fundamentally simplifies the device structure by eliminating complex laser optics and resonators while reducing overall device complexity.
Solution Approach 2:
The patent changes the fundamental operating parameters from optical (laser wavelength, power) to electrical (electron beam current, voltage, focus). By controlling electron beam parameters such as acceleration voltage and beam focus through electrostatic lenses, the system achieves EUV generation with simpler control electronics rather than complex optical parameter management.
2Illumination intensity
If high-power lasers are used for EUV lithography, then EUV radiation can be generated, but the device occupies a large volume
Solution Approach 1:
The replacement of the laser system with an electron beam system dramatically reduces the physical footprint. Electron beam sources and their associated focusing electronics occupy significantly less space than high-power laser generators, optical benches, and associated optics required for laser-based EUV generation.
Solution Approach 2:
The patent employs a compact arrangement where the electron beam path is folded back and forth through the interaction region using electrostatic deflectors. This nesting of the beam path allows the electron beam to traverse a longer effective path length within a compact volume, maintaining EUV generation efficiency while minimizing device footprint.
3Illumination intensity
If high-power lasers are used for EUV lithography, then EUV radiation can be generated, but the manufacturing cost becomes very high
Solution Approach 1:
The substitution of expensive laser technology with electron beam technology reduces manufacturing costs. Electron beam sources are based on well-established vacuum tube technology with simpler manufacturing requirements compared to high-power laser systems, which require precision optical components, specialized coatings, and complex alignment procedures.
Solution Approach 2:
The patent uses metal vapor (such as tin or zinc) as the radiating material, which can be supplied as inexpensive droplets or vapor. This replaces the need for expensive, precision-engineered laser optics that require costly maintenance and replacement. The metal vapor source is simple and can be replenished economically.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device simplifies the internal structure, reduces size, and lowers manufacturing costs while functioning as a lithographic tool for semiconductor manufacturing.
Implementation Method 1
a cathode electrode; a plurality of emitter located on the cathode electrode and including a carbon-based material
Implementation Method 2
a gate electrode which is located on the plurality of emitters at a distance from the plurality of emitters and to which a pulse voltage is applied
Implementation Method 3
a metal radiator which is located inside the discharge chamber and is ionized by the electron beams
Implementation Method 4
Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator
Data Source
AI summary
An extreme-ultraviolet light source device comprises: a discharge chamber of which the inside is maintained in a vacuum; an electron beam-emitting unit which is located inside the discharge chamber and produces electron beams; and a metal radiator which is located inside the discharge chamber and is ionized by the electron beams. Extreme-ultraviolet radiation occurs in plasma generated from the metal radiator. The electron beam-emitting unit comprises: a cathode electrode; a plurality of emitters located on the cathode electrode and including a carbon-based material; and a gate electrode which is located on the plurality of emitters at a distance therefrom and to which a pulse voltage is applied.