Electron Beam and Remote Plasma Selective Etching Without Ion Damage
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Solution Overview
Problem
Conventional ion-based plasma etching introduces surface damage due to ion bombardment, compromising device performance, and requires separate steps for etching and deposition, increasing manufacturing cost and time.
Innovation Solution
Integration of an Electron Beam (EB) source and a Remote Plasma (RP) source enables simultaneous material-selective etching and growth without masking, using reactive neutrals from the RP to functionalize the surface while minimizing damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If conventional ion-based plasma etching is used, then etching capability is achieved, but surface damage is introduced due to ion bombardment
Solution Approach 1:
The patent extracts the harmful ion component from the plasma etching process while retaining the beneficial reactive neutral species. By using remote plasma sources, ions are eliminated and only reactive neutrals reach the surface, enabling etching without ion bombardment damage.
Solution Approach 2:
The patent introduces an intermediary mechanism where electron beam irradiation mediates the interaction between reactive neutrals and the surface. The electron beam activates the surface and facilitates etching by reactive neutrals without requiring direct ion bombardment, thus resolving the contradiction between etching capability and surface damage.
2Device complexity
If separate steps for etching and deposition are used, then process control is simplified, but manufacturing cost and processing time increase
Solution Approach 1:
The patent merges etching and deposition functions into a single integrated process step. By using electron beam irradiation in the presence of reactive neutrals, the same process can simultaneously etch certain materials while depositing or functionalizing other materials, eliminating the need for separate etching and deposition steps.
Solution Approach 2:
The patent creates a universal process that can perform multiple functions (etching, deposition, surface functionalization) depending on the material being processed. The electron beam-reactive neutral interaction can be tuned to achieve different outcomes on different materials, making the process multi-functional and reducing overall process complexity.
3Ease of manufacture
If material-selective etching and growth is achieved without masking, then manufacturing cost is reduced, but process selectivity control becomes more challenging
Solution Approach 1:
The patent applies local quality by using focused electron beam irradiation to create spatially selective etching and growth. The electron beam can be precisely directed to specific locations on the substrate, enabling material-selective processing without physical masks. Different regions of the substrate receive different treatments based on electron beam positioning and material composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves infinite etching or growth selectivity, reduces surface damage, and simplifies semiconductor processing by integrating etching and growth into a single process, thereby lowering manufacturing costs and processing time.
Implementation Method 1
Electron Beam (EB) source... electron beam irradiation from the EB source... EB interacts with the modified surface and initiates material etching or growth
Implementation Method 2
Remote Plasma (RP) source... activation of the precursor by dissociation and related processes... reactive neutrals can reach and functionalize the surface
Data Source
AI summary
A method of material-selective etching and growth includes providing an electron beam (EB) source and providing a remote plasma (RP) source. The EBsource and the RP source are applied simultaneously to a device comprising a first material of a first selected area and a second material of a second selected area, wherein the simultaneous application of electron beam irradiation from the EB source and the chemical fluxes from the RP source performs etching of the first material and growth of a third material on the second material by chemical conversion.