Electric Discharge Tubes TRIZ Cases

A dual plasma source with shared optical coupling covers vacuum to atmospheric pressure in one unit, reducing ports, instruments, and space.

A low-inductance bias compensation circuit keeps wafer-to-chuck voltage near the threshold during >1 kV, >1 kHz plasma pulsing.

A two-step oxygen oxidation and remote fluorine radical clean removes SiCN chamber deposits faster while limiting ion damage and residue.

A nested dual-coil resonant inductor cuts coil heating and improves heat dissipation, enabling compact high-power plasma reactors.

A vertically movable insert tunes plasma diffusion from center to edge, improving ash rate and uniformity without breaking vacuum.

A recessed connection member replaces wires in a ceramic heater shaft, improving contact reliability and supporting more heating elements.

Conductive loops with reactive elements shift resonance as plasma forms, improving RF coupling balance and deposition uniformity.

Localized plasma at the wafer edge uses a side ground electrode to remove polymer deposits and prevent particle formation in later processes.

Mo or W RF rods with a Cr-containing nitride coating cut impedance and oxidation, improving plasma uniformity and susceptor durability.

Precomputed focal planes, stage alignment, and telecentric compensation correct image plane tilt to keep sub-5 nm resolution across many beams.

Adjacent focus fields let wide-area charged particle imaging cut autofocus time while preserving image accuracy and reducing beam damage.

Hydrogen treatment removes fluorine residue and an inhibiting gas slows top deposition, enabling void-free filling of high-aspect-ratio gaps.

A shielding multi-aperture plate protects active array-optical elements from secondary electrons and scattered radiation, improving imaging stability and unit life.

Electrically actuated poppets vary showerhead nozzle area, replacing multiple faceplates and reducing chamber downtime and cost.

Overlapping gas flow ring channels guide purge gas around the substrate support to block lower-chamber intrusion and cut backside deposition.

Simultaneous electron beam and remote plasma processing etches one material while growing another, cutting ion damage, time, and cost.

A deposited layer is converted in situ to expand inside trenches, vias, and recesses, enabling void-free semiconductor gap filling.

Segmented forelines, throttle valves, and purge channels control pressure and block precursor intrusion across multiple semiconductor process regions.

Fluid pressure flexes a monolithic platform to align coarse and fine motion on one axis, cutting positioning error and improving thermal stability.

A mesh electrode and seating gap hold seeds or powders against ionic winds, enabling uniform atmospheric-pressure plasma treatment.

By detecting the ion beam trace in the camera image, this case keeps the field of view aligned with the swing axis for accurate milling.

Timed impedance scans let the RF match retune during pulsed plasma processing, reducing distortion and stabilizing power delivery.

Dry gas purging of the evacuating pipe during chamber venting limits moisture outgassing, helping protect CD accuracy and yield.

A rotating sample roller with ion cleaning and magnetron sputtering improves metal deposition uniformity on magnetic powder despite agglomeration.

A rare-earth oxide film with thickness variation of 0.04 or less helps plasma processing members resist exposure, peeling, and early replacement.

Directional etching extends lithography openings horizontally to form sub-resolution groove patterns, avoiding costly EUV double patterning.

A ceramic-on-aluminum coating protects chamber clamps and springs from corrosion, thermal cycling, bubbles, and particulation.

Radial cantilevered protrusions segment the electrode aperture to collect more signal particles while limiting field penetration and beam spot loss.

H2O radicals create OH-terminated surfaces that improve halogen precursor adsorption, enabling high-quality low-temperature films in deep features.

Different thermal conductivity regions and pressure-controlled heat transfer medium keep substrate temperature uniform during plasma etching.

Vibrating a dielectric plate with a piezoelectric element accelerates plasma radicals, improving deep-pattern etch rate, depth, and selectivity.

Segmented antenna sections with capacitive loads lower voltage stress, sustain plasma longer, and limit heat damage in large-area plasma chambers.

Real-time monitoring and feedback keep secondary electron beamlets aligned to detector elements, reducing cross-talk and recalibration.

RF signal sensing inside the plasma chamber enables non-destructive endpoint detection and real-time control for better substrate uniformity.