Semiconductor Gap Filling by In-Situ Layer Volume Expansion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor device scaling techniques face challenges in filling gaps such as recesses, trenches, and vias without forming gaps or voids.
Innovation Solution
A method involving providing a substrate with a gap to a reaction chamber, depositing a layer into the gap, and converting the layer into a converted layer with a greater volume, using a system with precursor gas sources and a controller to control gas flow for seamless gap filling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition techniques are used to fill gaps, then the gap filling process is simple, but voids or gaps form in the filled structure
Solution Approach 1:
The patent changes the physical and chemical parameters of the filling material by depositing it in a different phase (lower density) and then converting it in-situ to the final phase (higher density). This parameter transformation enables the material to expand and fill voids that would form with conventional direct deposition, achieving complete gap filling without voids.
Solution Approach 2:
The core invention utilizes phase transitions of the filling material. The material is first deposited in a phase that allows conformal coating (such as a precursor layer or low-density phase), then converted in-situ to the final high-density phase through thermal or chemical processing. This phase transition enables volume expansion that fills gaps and eliminates voids.
2Volume of stationary object
If the layer volume is increased to fill the gap, then the gap is filled effectively, but the process complexity increases
Solution Approach 1:
The patent performs preliminary deposition of the filling material in a form that is easy to deposit conformally (such as a thin precursor layer or low-density phase). This preliminary action sets up the material in a state that enables subsequent volume expansion through in-situ conversion, rather than attempting to deposit the final high-density material directly which would be more complex and less conformal.
Solution Approach 2:
The patent uses an intermediary phase or state of the filling material. Instead of directly transforming the deposition process to achieve high density, the material is first deposited in an intermediary low-density phase that conforms well to the gap geometry, then this intermediary phase is converted in-situ to the final high-density phase, simplifying the overall process while achieving complete filling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves seamless or void-free gap filling, expanding the layer volume to fill the gap effectively, which is essential for advanced semiconductor device manufacturing.
Implementation Method 1
depositing a layer into the gap... using a system with precursor gas sources and a controller to control gas flow
Implementation Method 2
converting the layer into a converted layer in the gap. The converted layer has a second volume. The second volume is greater than the first volume
Data Source
AI summary
Disclosed are methods and systems for filing a gap. An exemplary method comprises providing a substrate in a reaction chamber. The substrate comprises at least one gap. The method further comprises depositing a layer into the gap. The layer has a first volume. Finally, the method further comprises converting the layer into a converted layer. The converted layer has a second volume. The second volume is greater than the first volume. The methods and systems are useful, for example, in the field of integrated circuit manufacture.