Gas Flow Ring Channels for Backside Deposition Control

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Solution Overview

Problem

Existing process chambers face challenges with backside deposition on substrate supports due to process gases entering the volume below the substrate, leading to increased cleaning frequency and reduced process uniformity. Additionally, increasing purge gas flowrates to mitigate this issue increases costs and downtime.

Innovation Solution

The implementation of a gas flow ring around the substrate support in the process chamber, featuring a ring-shaped body with overlapping portions that form a gas flow channel. This design ensures that purge gas flows around the substrate support, reducing the entry of precursor gases into the lower chamber and minimizing backside deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If the flowrate of purge gas is increased to prevent process gases from entering the volume below the substrate support, then backside deposition on the substrate support is reduced, but costs increase and chamber cleaning frequency increases

Engineering Contradiction:
Improvebackside depositionVSAvoidpurge gas flowrate
Core Design Contradiction:
Object-affected harmful factorsVSQuantity of substance

Solution Approach 1:

The gas flow ring is divided into multiple segments with overlapping portions that create distinct gas flow channels. This segmentation allows controlled distribution of purge gas around the substrate support, improving coverage and preventing process gases from entering the lower volume more effectively than a single continuous flow, thereby reducing backside deposition while optimizing purge gas usage

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The overlapping portions of the gas flow ring create a three-dimensional gas flow structure with channels that extend vertically from the bottom to top surfaces. This dimensional approach allows purge gas to flow in multiple directions and paths, enhancing the prevention of process gas intrusion into the lower volume while reducing the total purge gas flowrate required

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Object-affected harmful factors

If the flowrate of purge gas is increased to prevent process gases from entering the volume below the substrate support, then backside deposition on the substrate support is reduced, but downtime for cleaning the chamber increases

Engineering Contradiction:
Improvebackside depositionVSAvoidchamber cleaning downtime
Core Design Contradiction:
Object-affected harmful factorsVSLoss of time

Solution Approach 1:

The segmented gas flow ring structure with multiple overlapping portions creates numerous small gas flow channels that provide comprehensive coverage around the substrate support. This segmentation prevents process gases from finding pathways into the lower volume, significantly reducing backside deposition and thereby decreasing the frequency and downtime of chamber cleaning operations

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The gas flow ring acts as an intermediary structure between the purge gas source and the substrate support. It distributes and directs purge gas flow in a controlled manner through its overlapping portions and gas flow channels, effectively blocking process gases from entering the lower volume and preventing backside deposition without requiring excessive purge gas flowrates

Inventive Principle:
Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If the flowrate of purge gas is increased to prevent process gases from entering the volume below the substrate support, then process gas intrusion is reduced, but costs increase

Engineering Contradiction:
Improveprocess gas intrusionVSAvoidpurge gas flowrate
Core Design Contradiction:
Object-affected harmful factorsVSQuantity of substance

Solution Approach 1:

The gas flow ring is segmented into multiple overlapping portions that create numerous gas flow channels. This segmentation allows purge gas to be distributed efficiently around the substrate support, forming effective barriers against process gas intrusion into the lower volume while minimizing the total purge gas flowrate required compared to conventional single-flow designs

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The overlapping portions of the gas flow ring create localized gas flow channels with specific flow characteristics at different positions around the substrate support. This local quality optimization ensures that purge gas is delivered precisely where needed to block process gas intrusion, improving effectiveness while reducing overall purge gas consumption

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The gas flow ring enhances the balance and uniformity of purge gas flow around the substrate, reducing unintended depositions and the need for frequent chamber cleaning. This results in cost savings from reduced purge gas usage and increased process efficiency with improved uniformity.

Implementation Method 1

a gas flow ring disposed around an outer edge of the substrate support, the gas flow ring comprising: a ring-shaped body; a top surface; a bottom surface; a first overlapping portion extending from a first inner sidewall of the ring-shaped body; and a second overlapping portion extending from a second inner sidewall of the ring-shaped body, wherein the first overlapping portion is spaced apart from and overlies the second overlapping portion to form a gas flow channel that extends from the bottom surface to the top surface of the gas flow ring

Methodology Applied
Scientific EffectGas flow through channel:

Data Source

PatentUS20250122624A1Gas flow improvement for process chamber
Publication Date: 2025.04.17 APPLIED MATERIALS INC
  • US20250122624A1 patent drawing
  • US20250122624A1 patent drawing
  • US20250122624A1 patent drawing

AI summary

A process chamber including: a chamber body enclosing an interior volume; a substrate support disposed in the interior volume that includes a lower interior volume below the substrate support and an upper interior volume above the substrate support; a first purge gas line configured to provide a first flow of purge gas to the lower interior volume; and a gas flow ring disposed around an outer edge of the substrate support, the gas flow ring comprising: a ring-shaped body; a top surface; a bottom surface; a first overlapping portion extending from a first inner sidewall of the ring-shaped body; and a second overlapping portion extending from a second inner sidewall of the ring-shaped body. The first overlapping portion is spaced apart from and overlies the second overlapping portion to form a gas flow channel that extends from the bottom surface to the top surface of the gas flow ring.