Electrowetting Underfill Method for Semiconductor Packages
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Solution Overview
Problem
The existing underfill methods for semiconductor packages, particularly those using capillary action, face inefficiencies and incomplete filling due to surface tension and viscosity issues, leading to voids and defects when the bump height is lowered, and can result in filler overflow and contamination.
Innovation Solution
An underfill method and apparatus that utilizes electrowetting by charging a filler with an electric field to control wetting, enhancing filling efficiency by applying the filler between a substrate and a semiconductor device under an electric potential difference, thereby improving the permeation and distribution of the filler.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If capillary action is used for underfill, then the filling process is simple, but the filling speed is slow and incomplete filling occurs
Solution Approach 1:
The patent replaces the passive capillary action mechanism with an active electrowetting-based liquid ejection system. By applying voltage to charge the filler and using electric field interaction, the system achieves controlled, high-speed liquid ejection that overcomes the slow and passive nature of capillary action while maintaining manufacturing simplicity through automated voltage control.
Solution Approach 2:
The patent changes the physical state and properties of the filler by charging it with electric charge. This transformation enables the filler to respond to electric fields, allowing for controlled ejection and improved filling speed. The charged filler's interaction with the electric field provides adjustable parameters (voltage, charge density) that optimize both speed and completeness of filling.
2Device complexity
If capillary action is used for underfill, then no additional equipment is needed, but incomplete filling and voids occur
Solution Approach 1:
The patent replaces the passive capillary action mechanism with an active electrowetting-based liquid ejection system. By applying voltage to charge the filler and using electric field interaction, the system achieves controlled, high-speed liquid ejection that overcomes the slow and passive nature of capillary action while maintaining manufacturing simplicity through automated voltage control.
Solution Approach 2:
The patent incorporates feedback control through voltage adjustment based on filling progress. The system monitors the filling process and adjusts the applied voltage to ensure complete filling, preventing void formation. This feedback mechanism enhances reliability by adapting the ejection parameters to the actual filling state.
3Reliability
If large amount of filler is applied at once, then void formation is prevented, but filler overflow and contamination occur
Solution Approach 1:
The patent uses periodic or controlled incremental liquid ejection instead of applying a large amount of filler at once. By charging the filler and ejecting it in controlled amounts through voltage application, the system prevents overflow and contamination while ensuring complete filling through multiple controlled doses, thereby preventing void formation.
Solution Approach 2:
The patent employs dynamic control of the liquid ejection process through adjustable voltage parameters. The system can adapt the ejection rate and total amount of filler based on real-time conditions, allowing precise control to prevent both voids and overflow. This dynamic adjustment optimizes the balance between complete filling and contamination prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures faster and more complete filling of the gap between the substrate and semiconductor device, reducing the risk of voids and defects, and prevents filler overflow, thereby enhancing the reliability and performance of semiconductor packages.
Implementation Method 1
utilizes electrowetting by charging a filler with an electric field to control wetting
Implementation Method 2
capillary underfill for filling based on capillary action in between the semiconductor device and the substrate
Implementation Method 3
charging a filler to be filled in between the substrate and a device; applying the filler to the substrate; and subjecting the applied filler to an electric field
Data Source
AI summary
Disclosed are an underfill method and apparatus for a semiconductor package, the underfill method includes loading a substrate; charging a filler to be filled in between the substrate and a device; applying the filler to the substrate; and subjecting the applied filler to an electric field.


