Element Separation Structure With High-k Liner for Gate Control
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Solution Overview
Problem
Current semiconductor devices face challenges in enhancing integration density and reliability while maintaining performance, particularly in scaling techniques for multi-gate transistors where short channel effects and gate length scaling are concerns.
Innovation Solution
The semiconductor device incorporates a unique element separation structure with a core separation pattern and high dielectric constant liner, including a metal film, to separate active patterns and improve gate control, which enhances integration density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistor scaling is performed to increase integration density, then device density improves, but short channel effects worsen
Solution Approach 1:
The element separation structure divides the semiconductor substrate into distinct regions using core separation patterns and separation side wall patterns. This segmentation isolates adjacent active patterns, preventing electrical interference and maintaining reliable transistor operation at higher densities.
Solution Approach 2:
The separation side wall pattern includes a high dielectric constant liner with metal-containing dielectric film positioned specifically at the interface between the gate structure and element separation structure. This localized high-k material enhances gate control authority precisely where needed, suppressing short channel effects at scaled dimensions.
2Length of moving object
If gate length is reduced to improve scaling, then device size decreases, but gate control capability deteriorates
Solution Approach 1:
The high dielectric constant liner changes the dielectric parameter at the gate-element separation interface. This parameter modification increases gate control authority, allowing effective control even when gate length is reduced for scaling.
3Reliability
If element separation structure is added to improve gate control, then short channel effects are suppressed, but device complexity increases
Solution Approach 1:
The separation side wall pattern is formed nested on the core separation pattern. This nested configuration achieves effective element separation and gate control enhancement without requiring completely separate structural systems, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively improves the integration density and reliability of semiconductor devices by reducing short channel effects and enabling efficient gate control, thereby enhancing performance.
Implementation Method 1
the separation side wall pattern includes a high dielectric constant liner, and the high dielectric constant liner includes a high dielectric constant dielectric film including a metal
Data Source
AI summary
A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.