Embedding Thin-Film Capacitors in Semiconductor Packages
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Solution Overview
Problem
Conventional semiconductor packages face limitations in reducing impedance and inductance due to the restricted number of surface mount technology capacitors that can be mounted in parallel, necessitating innovative methods to embed thin-film capacitors within build-up layers for improved power distribution in high-frequency and low-voltage ICs.
Innovation Solution
The method involves embedding a thin-film capacitor with a temporary carrier layer, such as a magnetic sheet, copper clad, or tape, into the build-up layers of a semiconductor package, providing structural support during processing and allowing for minimal distortion or buckling, and subsequent removal after lamination to the core.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If surface mount technology capacitors are mounted in parallel on the semiconductor package, then impedance is reduced, but the package size must be increased to accommodate more capacitors
Solution Approach 1:
The thin-film capacitor is embedded within the build-up layers of the semiconductor package, nesting the capacitor structure inside the existing package architecture rather than mounting it on the surface. This allows the capacitor to occupy internal space without increasing the external package dimensions, thereby reducing impedance while maintaining compact package size.
Solution Approach 2:
The invention transitions from two-dimensional surface mounting of capacitors to three-dimensional embedding within the package's vertical build-up layers. By utilizing the vertical dimension and internal layers, the capacitor is integrated without requiring additional horizontal space, thus reducing impedance without increasing package footprint.
2Object-affected harmful factors
If thin-film capacitor is embedded into build-up layers, then distance from capacitor to IC is reduced and inductance decreases, but structural support is insufficient during processing
Solution Approach 1:
A temporary carrier layer is applied to the thin-film capacitor structure before embedding it into the build-up layers. This preliminary action provides the necessary structural support and rigidity during subsequent processing steps such as lamination and drilling. After the embedding process is complete, the temporary carrier layer is removed, leaving the compact thin-film capacitor embedded in the build-up layers with minimal inductance.
Solution Approach 2:
The temporary carrier layer acts as an intermediary element that provides mechanical strength and handling capability during the embedding process. This mediator layer is applied to the thin-film capacitor, facilitates the embedding into build-up layers, and is then removed after serving its purpose, enabling the achievement of low inductance without compromising processing feasibility.
3Ease of manufacture
If thin-film capacitor structure is made flexible for embedding, then integration is improved, but distortion and buckling occur during processing
Solution Approach 1:
A temporary carrier layer is applied to the thin-film capacitor structure before embedding it into the build-up layers. This preliminary action provides the necessary structural support and rigidity during subsequent processing steps such as lamination and drilling. After the embedding process is complete, the temporary carrier layer is removed, leaving the compact thin-film capacitor embedded in the build-up layers with minimal inductance.
Solution Approach 2:
The temporary carrier layer serves as a protective cushion that prevents distortion and buckling of the thin-film capacitor structure during the embedding and processing steps. By providing this beforehand protection, the flexible capacitor can be successfully integrated without suffering from processing-induced deformations.
Data Source
AI summary
Disclosed are methods of making a semiconductor package comprising at least one thin-film capacitor embedded into at least one build-up layer of said semiconductor package. A thin-film capacitor is provided wherein the thin-film capacitor has a first electrode and a second electrode separated by a dielectric. A temporary carrier layer is applied to the first electrode and the second electrode is patterned. A PWB core and a build-up material are provided, and the build-up material is placed between the PWB core and the patterned second electrode of said thin-film capacitor. The patterned electrode side of the thin-film capacitor is laminated to the PWB core by way of the build-up material, the temporary carrier layer is removed, and the first electrode is patterned.