Embedded Capacitor BAW Resonator for Spurious Wave Suppression
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Solution Overview
Problem
Film bulk acoustic wave resonators suffer from spurious acoustic waves that degrade their frequency response due to the non-zero Poisson's ratio of piezoelectric materials, leading to undesirable transverse acoustic waves and increased size when separate capacitors are used in ladder filters.
Innovation Solution
A film bulk acoustic wave resonator design incorporating a buried layer of conductive material within the dielectric layer beneath the cavity and electrodes, which forms a capacitor with the electrodes, allowing for control of the electromechanical coupling coefficient and integration of capacitors within the resonator structure to reduce size and spurious wave generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If separate capacitors are used in ladder filters, then the electromechanical coupling coefficient can be controlled, but the device size increases
Solution Approach 1:
The patent merges the capacitor function with the resonator structure by embedding a conductive layer within the dielectric material beneath the cavity. This integration eliminates the need for separate capacitors while maintaining the ability to control the electromechanical coupling coefficient, thereby reducing device size without sacrificing functionality
Solution Approach 2:
The dielectric layer serves multiple functions: it provides mechanical support for the resonator structure and simultaneously acts as the capacitor dielectric medium. The embedded conductive layer within this dielectric serves as one plate of the capacitor while the electrode serves as the other plate, enabling the dielectric layer to fulfill both structural and capacitive roles
2Ease of manufacture
If piezoelectric materials with non-zero Poisson's ratio are used, then the resonator can be manufactured, but spurious transverse acoustic waves are generated that degrade frequency response
Solution Approach 1:
The patent converts the harmful spurious acoustic waves into a beneficial effect by using the embedded conductive layer as a capacitive element that actively controls the electromechanical coupling coefficient. The same piezoelectric material properties that generate spurious waves are utilized to enable precise tuning of the resonator's electrical characteristics, transforming a manufacturing constraint into a design advantage
Solution Approach 2:
The patent changes the electrical parameters of the resonator system by embedding the conductive layer at specific positions and configurations within the dielectric. By adjusting the geometry, position, and electrical properties of this embedded layer, the electromechanical coupling coefficient can be precisely controlled to optimize frequency response while compensating for the effects of Poisson's ratio in the piezoelectric material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The buried conductive layer reduces the electromechanical coupling coefficient and effectively suppresses spurious acoustic waves, improving frequency response while integrating capacitors to maintain a compact design, thus enhancing the performance and size efficiency of film bulk acoustic wave resonators and ladder filters.
Implementation Method 1
a layer of piezoelectric material
Implementation Method 2
a layer of conductive material buried within the layer of dielectric material at least partially beneath the cavity and the bottom electrode
Data Source
AI summary
Aspects and embodiments disclosed herein include a film bulk acoustic wave resonator comprising a substrate including a layer of dielectric material disposed on an upper surface of the substrate, a layer of piezoelectric material, a top electrode disposed on a top surface of the layer of piezoelectric material, a bottom electrode disposed on a bottom surface of the layer of piezoelectric material, a cavity defined between a lower surface of the bottom electrode and an upper surface of the layer of dielectric material, and a layer of conductive material buried within the layer of dielectric material at least partially beneath the cavity and the bottom electrode.


