Embedded Capacitor in Semiconductor Package Using High-k Dielectric
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Solution Overview
Problem
As electronic devices become more powerful, they require faster switching interfaces, leading to voltage irregularities that create noise, which can impact device functionality. Adding decoupling capacitance to semiconductor die helps reduce noise but often requires significant space, compromising other components and increasing costs.
Innovation Solution
A semiconductor package with an embedded capacitor is designed, where the capacitor is vertically stacked with its plates and dielectric formed from multiple layers, allowing for maximum decoupling capacitance without reducing the number of other components on the die, using a wafer level package build-up process that incorporates a high-k dielectric material for increased capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If decoupling capacitance is added on the semiconductor die, then noise reduction is improved, but die area is consumed and component density decreases
Solution Approach 1:
The capacitor structure transitions from a planar layout to a three-dimensional vertically stacked configuration. Multiple capacitor plates are stacked in the vertical dimension (z-axis) above the semiconductor die surface, allowing increased capacitance without consuming additional die area. The capacitor plates extend vertically from the die surface, utilizing the third dimension to pack more capacitance into the same footprint.
Solution Approach 2:
The capacitor employs a high-k dielectric material with dielectric constant greater than 3.9, replacing conventional low-k dielectrics. This composite material approach enables achieving the required capacitance values with smaller physical dimensions, as the higher dielectric constant provides greater capacitance per unit volume and area.
2Object-affected harmful factors
If decoupling capacitance is added on the semiconductor die, then noise reduction is improved, but manufacturing complexity increases
Solution Approach 1:
The capacitor manufacturing process is merged with the existing semiconductor packaging process. The capacitor plates, dielectric layers, and interconnect structures are formed using the same wafer-level packaging tooling and process steps that are already used for attaching and interconnecting semiconductor devices, eliminating the need for separate capacitor fabrication equipment and processes.
Solution Approach 2:
The packaging structure serves multiple functions simultaneously: it provides mechanical support for the semiconductor die, enables electrical interconnections between devices, and forms the capacitor structure. The same metal layers and dielectric materials used for packaging also constitute the capacitor electrodes and insulation, making the packaging structure multi-functional.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maximizes decoupling capacitance on the semiconductor die without reducing other components, achieving effective noise reduction with minimal additional processing steps, thereby enhancing device performance while maintaining component density.
Implementation Method 1
using a wafer level package build-up process that incorporates a high-k dielectric material for increased capacitance
Data Source
AI summary
A semiconductor package with an embedded capacitor and corresponding manufacturing methods are described. The semiconductor package with the embedded capacitor includes a semiconductor die having a first metal layer extending across at least a portion of a first side of the semiconductor die and a package structure formed on the first side of the semiconductor die. A first electrical conductor of the embedded capacitor is formed in the first metal layer of the semiconductor die. The package structure includes a second metal layer that has formed therein a second electrical conductor of the embedded capacitor. A dielectric of the embedded capacitor is positioned within either the semiconductor die or the package structure of the semiconductor package to isolate the first electrical conductor from the second electrical conductor of the embedded capacitor.