Semiconductor/Solid-State Device Details TRIZ Cases

Dielectric fluid equalizes external water pressure, reducing container strength requirements while enabling efficient underwater cooling.

Metal side walls act as heat sinks to dissipate interior die heat while flexible substrates allow rotation without breaking bond wires.

Placeholder structures enable thicker stressed dielectric deposition, resolving void formation while increasing channel strain and carrier mobility.

A semiconductor device merges bonding pads and interconnections into a single coplanar layer to simplify chip stacking.

Conductive through-holes link functional chips to sub-matrix circuits on an insulation substrate, eliminating expensive thin-film transistor processes.

Composite thick metallization uses sequential hot and cold metal deposition to improve step coverage and alignment accuracy while reducing yield loss.

Recessed magnetic jigs correct substrate warp during folding, preventing wire breakage and ensuring accurate alignment at the wiring portion.

Segmented passivation layers isolate the device junction while metal interconnects reduce parasitic inductance for high breakdown voltage operation.

A dual-metal magnetic shield structure uses opposing stress conditions to cancel residual stresses in semiconductor devices.

Segmented support films and adhesive layers enable precise circuit mounting on flexible displays, eliminating high-precision assembly requirements.

Stacked semiconductor dice use vertical conductor bumps and through-silicon vias for direct electrical interconnection.

A post-passivation interconnect structure uses strategically aligned openings to shield underlying layers from thermal expansion mismatch.

Idling a superconducting magnet above critical temperature reduces energy waste while preserving field stability.

Alternating silicon and resin layers in a multilayer printed wiring board eliminate thermal stress at interfaces, ensuring reliable semiconductor connections.

Bond pad via etching creates capacitor contacts through dielectric layers, eliminating additional fabrication steps and reducing process complexity.

Vertical chip configuration removes wire bonds to eliminate parasitic inductance, resolving common mode rejection excursions.

A phase-change material radio frequency switch integrates with group III-V transistors to enable non-volatile circuit reconfiguration.

Capacitance adjustment sections at a different layer from fanout lines modify electrical parameters to ensure uniform signal transmission.

Bonding layers with distinct thermal expansion and curing shrinkage values counteract warpage in stacked semiconductor packages.

Segmented gate plates lower equivalent resistance and ensure uniform turn-on, resolving trade-offs between switching speed and device area.

An inverted bumpless build-up layer package routes die interconnects upward to reduce overall height.

Recesses in the metal layer stop crack propagation from thermal expansion differences, preventing delamination and short circuits in semiconductor packages.

Laser heating through a thin foil substrate enables precise chip alignment and contact, reducing handling effort and process time.

Reducing chip thickness below 160 micrometers allows the component to flex during thermal cycling, preventing contact detachment in automotive applications.

A segmented absolute position measuring device separates radiation-compatible components from conventional peripheral units via electrical lines.

A titanium barrier metal film forms in deep and shallow contact holes via controlled partial pressure, suppressing contact resistance variation.

A stackable semiconductor package uses electroplated conductive tunnels to extend bottom contact pads through the encapsulation area.

Host die conductive receiving areas replace spacer layers to directly connect stacked dies, reducing package size and manufacturing costs.

Right-angled and arc-shaped terminal connections resolve the trade-off between compact module size and vibration damage resistance.

A semiconductor package structure uses an underfill layer to fill gaps between stacked components and a substrate.

Flexible circuits replace twisted wires in power modules, eliminating manual soldering and ensuring consistent trace lengths for balanced gate loops.

A hydrogen insulating layer supplies ions to a dummy contact plug that guides their movement through interlayer insulation.

Integrating inductor and capacitor in far back end of line layers using high dielectric materials.

Controlled ring-closure rate in polyhydroxyamide reduces substrate stress while maintaining mechanical strength.

A semiconductor solder joint uses a barrier layer between high and low temperature solders to prevent mixing that causes cracks and reliability degradation.

Thermally conductive dielectric interlayer on attachment region reduces housing thickness while preventing voids in encapsulation.

Through semiconductor vias conduct heat from stacked dies to a carrier substrate for efficient thermal dissipation.

A copper via structure uses a damage curing layer and manganese cap to block metal migration.

Segmented polymer seals create stress-free cavities beneath MEMS devices, eliminating mechanical stress from mold compounds that degrades performance.

Segmenting the carrier into distinct regions reduces package inductance and switching losses while maintaining high-voltage creepage requirements.

Segmented metathesis curing of norbornene polymers overcomes low glass transition temperatures for engine covers.

Vertical inductor coils and capacitors integrate into interconnect structures, reducing chip area consumption while lowering eddy current losses.

Photolithography and etching remove an inorganic layer from a preset region before cutting, preventing stress-induced cracks in flexible OLED devices.

Electroplated metal layer on chip carrier sides prevents delamination from moisture intrusion while enabling efficient heat dissipation.

Mound and dimple shaped mold cap portions absorb internal stresses from thermal mismatch, preventing warpage induced cracking in singulated units.

Vertical stacking of capacitor plates with high-k dielectric maximizes decoupling capacitance on the die without consuming additional area.

Conductive vias extend through insulating layers to a grounded heat spreader, dissipating thermal energy and shielding against electromagnetic interference.

Notched fins and parallel channels direct coolant flow to reduce pressure loss while maintaining uniform temperature across semiconductor elements.

A method for producing three-dimensional integrated electronic circuits using segmented interconnections to increase component density.

Dummy traces fill empty regions on the substrate to eliminate topographical variations that cause interfacial voids during film die attachment.