Grounded Shielding Layer for TSV Noise Reduction

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Solution Overview

Problem

The increasing integration density of semiconductor components leads to electrical noise and electromagnetic interference, which existing technologies have not adequately addressed, impacting signal quality and requiring innovative solutions for noise reduction and compact integration.

Innovation Solution

A semiconductor structure incorporating a shielding layer made of electrically conductive material coupled to ground, surrounding through-substrate vias (TSVs) to dissipate radiation signals and prevent noise induction, allowing for reduced spacing between TSVs and enabling compact integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If integration density of semiconductor components is increased, then more components can be integrated into a given area, but electrical noise and electromagnetic interference increase

Engineering Contradiction:
Improveintegration densityVSAvoidelectrical noise
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

A shielding layer made of electrically conductive material is introduced as an intermediary between TSVs and semiconductor devices. This shielding layer acts as a mediator that intercepts and redirects electromagnetic radiation away from sensitive components, thereby reducing electrical noise and interference while allowing high integration density to be maintained

Inventive Principle:
Principle #24Intermediary (Mediator)

2Length of moving object

If spacing between TSVs is reduced for compact integration, then miniaturization is achieved, but electromagnetic interference between adjacent TSVs increases

Engineering Contradiction:
Improvespacing between TSVsVSAvoidelectromagnetic interference
Core Design Contradiction:
Length of moving objectVSObject-generated harmful factors

Solution Approach 1:

The shielding layer serves as a physical and electromagnetic intermediary positioned between adjacent TSVs. By placing this conductive shielding structure in the intermediate zone, electromagnetic fields from one TSV are blocked from directly coupling to adjacent TSVs, enabling reduced spacing without proportionally increasing interference

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The harmful electromagnetic radiation is extracted or removed from the signal path by the shielding layer. The shielding layer captures and redirects the electromagnetic energy away from sensitive areas, effectively taking out the interference component before it can affect adjacent structures

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The shielding layer effectively reduces radiation-induced noise and crosstalk, enabling closer proximity of TSVs and facilitating compact integration of semiconductor components while maintaining signal integrity.

Implementation Method 1

The shielding layer includes an electrically conductive material coupled to ground through a ground layer... able to drive a radiation signal to ground by dissipating energy of the radiation signal

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS11031348B2Semiconductor structure
Publication Date: 2021.06.08 NAN YA TECH
  • US11031348B2 patent drawing
  • US11031348B2 patent drawing
  • US11031348B2 patent drawing

AI summary

The present disclosure provides a semiconductor structure, including a substrate having a front surface and a back surface, at least one semiconductor device, a first TSV disposed in the substrate, an insulating layer surrounding the first TSV, a shielding layer surrounding the insulating layer, and a second TSV adjacent to the first TSV. The semiconductor device is disposed in a device region of the substrate. The first TSV is exposed by the front surface and the back surface of the substrate. The insulating layer includes an electrically insulating material. The shielding layer includes an electrically conductive material coupled to ground through a ground layer. The second TSV is exposed by the front surface and the back surface of the substrate.