Hydrogen Insulating Layer and Dummy Contact Plug for Leakage Current Reduction
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Solution Overview
Problem
The miniaturization and complexity of semiconductor devices lead to increased dangling bonds in silicon substrates, causing leakage currents that negatively impact operation speed and refresh characteristics.
Innovation Solution
A semiconductor device structure incorporating a hydrogen insulating layer with hydrogen ions, a diffusion prevention layer, and a dummy contact plug to provide a movement path for hydrogen ions, thereby reducing leakage currents and enhancing device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If miniaturization and complexity are increased to improve device integration, then device functionality is enhanced, but dangling bonds in silicon substrates increase causing leakage currents
Solution Approach 1:
A hydrogen-containing insulating layer is introduced as an intermediary between the silicon substrate and upper structures. This layer serves as a mediator that supplies hydrogen ions to passivate dangling bonds on the substrate surface, thereby eliminating leakage currents while allowing the miniaturized device structure to function properly.
Solution Approach 2:
The hydrogen-containing insulating layer is formed in advance before final device assembly, pre-supplying hydrogen ions to the substrate surface. This preliminary action ensures that dangling bonds are passivated before the device operates, preventing leakage currents from affecting device performance.
2Reliability
If a hydrogen insulating layer is added to reduce leakage currents, then device reliability is improved, but device structure complexity increases
Solution Approach 1:
The hydrogen-containing insulating layer performs multiple functions simultaneously: it acts as an electrical insulator to isolate different device regions, provides hydrogen ions to passivate dangling bonds and reduce leakage currents, and serves as a structural support layer. This multi-functionality reduces the need for additional dedicated layers, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The patent combines the insulating function and hydrogen supply function into a single layer structure. Rather than adding separate insulating layers and hydrogen treatment layers, the invention merges these functions into one hydrogen-containing insulating layer, thereby achieving leakage current reduction with minimal increase in structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes leakage currents and improves the operational speed and refresh characteristics of semiconductor devices by utilizing a hydrogen insulating layer and a dummy contact plug to manage hydrogen ion movement.
Implementation Method 1
The dummy contact plug is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer
Data Source
AI summary
A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.