Semiconductor Die Stack Thermal Management via Through Vias
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Solution Overview
Problem
The challenge in scaling down semiconductor devices is to improve heat dissipation while maintaining quality, yield, performance, and reliability, as conventional methods struggle to effectively manage thermal conductivity in compact designs.
Innovation Solution
A semiconductor device design featuring a die stack with an intervening bonding layer and a carrier structure that includes through semiconductor vias and conductive plates for thermal conduction, where the carrier substrate is bonded with die structures using a bonding layer, enhancing thermal conductivity by allowing heat to be dissipated through the conductive plates and vias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to improve computing ability, then device density and computing performance are improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat dissipation by forming through-semiconductor vias that extend vertically through the carrier substrate. This vertical dimension provides additional heat conduction pathways, allowing heat to be dissipated from internal regions of the stacked semiconductor devices directly to the carrier substrate, thereby improving heat dissipation capability while maintaining compact form factor for high computing ability.
Solution Approach 2:
The patent introduces through-semiconductor vias as intermediary thermal conduction structures between the stacked semiconductor dies and the carrier substrate. These vias serve as thermal mediators that conduct heat away from the high-density stacked devices, effectively coupling the heat generation regions with the heat dissipation regions and resolving the thermal management challenge in scaled-down high-performance devices.
2Ease of manufacture
If conventional fabrication methods are used for scaled-down devices, then manufacturing simplicity is maintained, but thermal conductivity and reliability deteriorate
Solution Approach 1:
The through-semiconductor vias are designed to serve multiple functions simultaneously: they provide electrical interconnections between stacked dies and act as thermal conduction pathways. This multi-functionality allows the same structural elements to address both electrical connectivity and thermal management requirements, improving reliability without significantly complicating the fabrication process.
Solution Approach 2:
The carrier substrate with pre-formed through-semiconductor vias is prepared in advance before the stacked semiconductor devices are assembled. This preliminary preparation of the thermal conduction infrastructure allows for integrated thermal management to be built into the device architecture from the outset, ensuring reliable heat dissipation while maintaining a streamlined fabrication workflow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves thermal conductivity, leading to enhanced performance by effectively dissipating heat accumulated during operation, thereby addressing the limitations of conventional methods in compact semiconductor device scaling.
Implementation Method 1
through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat
Data Source
AI summary
The present application provides a method for fabricating a semiconductor device. The method includes providing a carrier substrate, forming through semiconductor vias in the carrier substrate for thermally conducting heat, forming a bonding layer on the carrier substrate, providing a first die structure including through semiconductor vias, forming an intervening bonding layer on the first die structure, bonding the first die structure onto the bonding layer through the intervening bonding layer, and bonding a second die structure onto the first die structure. The carrier substrate, the through semiconductor vias, and the bonding layer together configure a carrier structure. The second die structure and the first die structure are electrically coupled by the through semiconductor vias.