Embedded Electrode Capacitor Structure for IC Signal Filtering
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Solution Overview
Problem
The increasing complexity of integrated circuit (IC) manufacture due to scaling down has necessitated corresponding developments in IC manufacture to fully realize the benefits of increased functional density and reduced geometric size.
Innovation Solution
A semiconductor device with a capacitor structure that includes a first electrode and multiple second electrodes, some of which are embedded within the first electrode, enhancing capacitance and allowing for integration with logic device manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If capacitor structures are added to semiconductor devices to improve signal filtering, then signal filtering capability is improved, but device complexity increases
Solution Approach 1:
The patent embeds second electrodes within the first electrode structure, creating a nested configuration where capacitor elements are integrated within existing electrode spaces. This nesting approach allows capacitor functionality to be added without requiring separate external capacitor components, thereby improving signal filtering while minimizing increases in overall device complexity
Solution Approach 2:
The patent combines capacitor structure formation with existing logic device manufacturing processes by integrating electrode and dielectric layer formation steps into the standard fabrication sequence. This merging of functions allows the capacitor structure to be created alongside logic devices using shared process steps, reducing the need for additional standalone capacitor fabrication processes
2Quantity of substance
If multiple electrodes are embedded within the first electrode to enhance capacitance, then capacitance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms the first electrode structure and opens portions of it before filling with second electrodes and dielectric materials. This preliminary structuring creates pre-defined spaces and alignment references that guide subsequent material deposition, ensuring precise positioning of embedded elements without requiring extremely tight process control during final assembly
Solution Approach 2:
The capacitor structure is divided into discrete components: first electrode, second electrodes, and dielectric materials, each formed in separate sequential steps. This segmentation allows each component to be optimized and controlled independently, reducing the cumulative precision requirements compared to forming the entire multi-electrode structure in a single process step
3Ease of manufacture
If capacitor structure formation is integrated with logic device manufacturing processes, then ease of manufacture is improved, but process complexity increases
Solution Approach 1:
The patent designs the fabrication process to serve multiple functions: forming both logic device structures and capacitor structures using the same sequence of deposition, etching, and planarization steps. This multi-functionality allows a single integrated process flow to accomplish what would traditionally require separate dedicated processes, improving ease of manufacture while keeping process complexity manageable through standardization
Data Source
AI summary
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a capacitor structure. The capacitor structure is disposed on the substrate. The capacitor structure includes a first electrode and a plurality of second electrodes. At least one of the plurality of second electrodes is embedded within the first electrode.