Embedded IC Package Creepage Resistance via Composite Encapsulation
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Solution Overview
Problem
Current manufacturing methods for high voltage semiconductor power modules face challenges due to the limited dielectric strength and creep resistance of organic polymer materials used for encapsulation, which degrade with moisture exposure, restricting the usability of chip-housings in high-voltage applications.
Innovation Solution
The method involves forming grooves or structures in the encapsulation material between chip interconnects using creepage strength materials like glass or ceramics to increase dielectric strength and creepage resistance, and forming protrusions or cavities to enhance the creepage distance, thereby improving the reliability of high-voltage chip packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If organic polymer materials are used for encapsulation, then ease of manufacture is improved, but dielectric strength and creep resistance deteriorate
Solution Approach 1:
The patent applies composite materials by combining organic polymer encapsulation material with inorganic filler particles (such as glass beads, ceramic particles, or other high dielectric strength materials). This composite structure maintains the ease of manufacture and molding properties of organic polymers while the inorganic filler particles provide enhanced dielectric strength and creep resistance, directly resolving the contradiction between ease of manufacture and dielectric strength.
2Ease of manufacture
If organic polymer materials are used for encapsulation, then ease of manufacture is improved, but creep resistance deteriorates
Solution Approach 1:
The composite material structure with inorganic filler particles dispersed in the organic polymer matrix provides improved creep resistance. The inorganic particles act as reinforcement that prevents polymer chain movement and deformation under stress, while the overall composite can still be molded using standard polymer processing techniques, maintaining ease of manufacture.
Solution Approach 2:
The patent applies local quality by concentrating the high creep resistance properties in specific regions where needed. The inorganic filler particles are distributed throughout the encapsulation material, providing localized reinforcement at stress concentration points and between electrical interconnects, while the bulk material retains its processability and ease of manufacture.
3Ease of manufacture
If moisture is present, then ease of manufacture is not affected, but dielectric strength and creep resistance deteriorate
Solution Approach 1:
The patent converts the harmful effect of moisture into a beneficial outcome by using hydrophobic inorganic filler particles (such as glass beads or ceramic particles) that repel moisture. These particles create a moisture barrier within the encapsulation material, preventing moisture penetration and degradation. The inorganic materials are inherently more moisture-resistant than organic polymers, so their inclusion transforms the moisture sensitivity of the polymer into an opportunity for enhanced moisture protection.
4Reliability
If structures are added to increase creepage resistance, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the function of creepage resistance enhancement with the encapsulation material itself. Instead of adding separate structural features or components, the inorganic filler particles are integrated directly into the polymer matrix, creating a composite material that provides both encapsulation and creepage protection in a single unified structure. This reduces device complexity while maintaining improved reliability.
Data Source
AI summary
A embedded integrated circuit package is provided, the embedded integrated circuit package including: at least one chip arranged over a chip carrier, the at least one chip including a plurality of chip contact pads; encapsulation material formed over the chip carrier and at least partially surrounding the at least one chip; a plurality of electrical interconnects formed through the encapsulation material, wherein each electrical interconnect is electrically connected to a chip contact pad; and a structure formed between the electrical interconnects of the embedded integrated circuit package, wherein the structure increases the creepage resistance between the electrical interconnects.