Semiconductor/Solid-State Device Details TRIZ Cases

Vertically offset conductive pillars stack interconnects across multiple substrate layers to maximize routing density within a fixed footprint.

A substrate accommodates a semiconductor device in a recess and fills surrounding penetration holes with insulating resin for electrical connections.

Internal electrodes in the power chip integration module reduce parasitic inductance and prevent short circuits by replacing dense planar wiring.

A semiconductor contact structure uses a cobalt plug encased in tungsten to reduce electrical resistance.

An arched pedestal integrated circuit die provides a stable mounting surface for wire bonding in stacked configurations.

3D printing embeds passive components within ceramic blocks to reduce device volume and material waste.

Multi-layer back side metallization with titanium and nickel ensures reliable adhesion while improving heat dissipation from integrated circuit dies.

Deep trench insulators define conductive pillars in the front end of line process, reducing through-silicon via manufacturing cost and complexity.

A protective film with a narrower second opening covers semiconductor connection pads, reducing corrosion and damage from moisture and chemical solutions.

A stacked semiconductor package uses connection patterns on inclined side surfaces to electrically link chip pads without through-electrodes.

Different sized solder bumps on uniform pads optimize signal integrity and mechanical stability in semiconductor packages.

A conductive hillock suppression structure blocks copper diffusion paths at the polished top surface of through substrate vias.

A fan-out semiconductor package uses a dielectric layer to encapsulate conductive bumps within an insulating matrix.

Sintered alumina ceramic substrate with zirconia and magnesia additives enhances thermal conductivity and mechanical strength.

A UV curable silicone composition cures rapidly under light without thermal heating.

Aligning central axes of dummy patterns across layers in semiconductor devices to suppress moire interference during manufacturing.

Uniform underfill height minimizes substrate warpage in integrated circuit packaging systems.

Composite connecting structures reduce thermal stress from copper pillar expansion, allowing transistors to sit adjacent to vias without keep-out zones.

Protruding TSV end portions enable secure mechanical anchoring within passivation layers for robust semiconductor interconnects.

Multilayer substrate power converter minimizes inductive noise by separating reference potential and control signal wirings across different layers.

A gold-silver alloy wire with a 50 to 90 μm recrystallized region manages mechanical stress in light emitting devices.

A metal cap layer with a higher melting point forms over lead-free solder bumps to prevent deformation and reduce shorting risks between adjacent interconnects.

A flexible display array substrate integrates a crack preventing unit in non-display regions to protect encapsulation layers.

An acrylic sealing composition uses polyphenylene ether resin with radical-polymerizable substituents to enable sheet molding.

Placing a ferroelectric layer outside the active area resolves capacitance matching issues while enabling sub-threshold swing below 60 mV/decade.

Defines specific via placement regions based on consumption current to reduce signal wiring congestion around macro cells.

A semiconductor package manufacturing method uses a segmented support body to arrange chips and form resin layers.

Bending wing portions into guard rail trenches uses elastic restoring force to secure the shield without adhesives.

Redistribution lines reposition chip pads to shorten wirebonding connections, avoiding substrate blockage and layout redesign costs.

Segmenting contact holes into lower and upper sections reduces the depth-to-width ratio, easing metal deposition in high-K dielectric structures.

A packaging structure uses a template cavity to form a localized protective epoxy layer over chip and bonding wires.

A semiconductor structure uses a dummy gate to define contact holes for source/drain regions before final gate formation.

Replacing dielectric layers with low-k materials suppresses fringing electric fields to minimize parasitic cell formation and improve programming accuracy.

An antifuse structure merges a sensing transistor directly into the cell to detect internal resistance changes via conductance shifts.

Lateral electrode expansion stabilizes RRAM resistance states while maintaining low step heights to prevent current leakage.

Resin sheets prevent outgas fouling of suction holes, ensuring reliable semiconductor chip mounting and effective heat transfer.

Embedding memory devices directly into organic substrates using EMIB interconnects eliminates silicon interposers and TSVs to reduce latency.

Segmenting the heat spreader frame into vertical bodies bridges poor encapsulant conductivity, resolving temperature-reliability trade-offs.

Screen printing conductive paste creates a ground plane that reduces manufacturing complexity while shielding sensitive components from electromagnetic fields.

Specific dimensional relationships between contact pads and underbump metallization prevent passivation layer cracks during manufacturing.

Transfer solder layer from intermediate structure to bump core on die, resolving thermocompression bond failure under temperature cycling stress.

Adjusting non-default-rule line widths based on current levels mitigates electromigration risks while reducing capacitance in integrated circuit designs.

A microelectronic package uses mirror-image pillars to attach stacked dice directly to a substrate.

Aerosol jet printing deposits solderable material to form interconnect structures, eliminating expensive subtractive processes and reducing material waste.

Silicon interposers fan out metal pitches to reduce package height in three-dimensional integrated circuits.

A semiconductor device uses openings on the encapsulation member to expose element surfaces for direct electrical connection.

Nested vertical channel structures with isolation layers reduce cell array area while maintaining operational reliability.

Bonding memory dies to both sides of a CMOS support die increases vertical stacking capacity.

An interposer chip with through-substrate vias electrically couples a voltage regulator module to a processor.

A material-free void between adjacent fuses prevents crack propagation during laser blow operations.