Semiconductor/Solid-State Device Details TRIZ Cases

Vertically offset conductive pillars stack interconnects across multiple substrate layers to maximize routing density within a fixed footprint.

A substrate accommodates a semiconductor device in a recess and fills surrounding penetration holes with insulating resin for electrical connections.

Internal electrodes in the power chip integration module reduce parasitic inductance and prevent short circuits by replacing dense planar wiring.

A semiconductor contact structure uses a cobalt plug encased in tungsten to reduce electrical resistance.

An arched pedestal integrated circuit die provides a stable mounting surface for wire bonding in stacked configurations.

3D printing embeds passive components within ceramic blocks to reduce device volume and material waste.

Multi-layer back side metallization with titanium and nickel ensures reliable adhesion while improving heat dissipation from integrated circuit dies.

Deep trench insulators define conductive pillars in the front end of line process, reducing through-silicon via manufacturing cost and complexity.

A protective film with a narrower second opening covers semiconductor connection pads, reducing corrosion and damage from moisture and chemical solutions.

A stacked semiconductor package uses connection patterns on inclined side surfaces to electrically link chip pads without through-electrodes.

Different sized solder bumps on uniform pads optimize signal integrity and mechanical stability in semiconductor packages.

A conductive hillock suppression structure blocks copper diffusion paths at the polished top surface of through substrate vias.

A fan-out semiconductor package uses a dielectric layer to encapsulate conductive bumps within an insulating matrix.

Sintered alumina ceramic substrate with zirconia and magnesia additives enhances thermal conductivity and mechanical strength.

A UV curable silicone composition cures rapidly under light without thermal heating.

Aligning central axes of dummy patterns across layers in semiconductor devices to suppress moire interference during manufacturing.

Uniform underfill height minimizes substrate warpage in integrated circuit packaging systems.

Composite connecting structures reduce thermal stress from copper pillar expansion, allowing transistors to sit adjacent to vias without keep-out zones.

Protruding TSV end portions enable secure mechanical anchoring within passivation layers for robust semiconductor interconnects.

Multilayer substrate power converter minimizes inductive noise by separating reference potential and control signal wirings across different layers.

A gold-silver alloy wire with a 50 to 90 μm recrystallized region manages mechanical stress in light emitting devices.

A metal cap layer with a higher melting point forms over lead-free solder bumps to prevent deformation and reduce shorting risks between adjacent interconnects.

A flexible display array substrate integrates a crack preventing unit in non-display regions to protect encapsulation layers.

An acrylic sealing composition uses polyphenylene ether resin with radical-polymerizable substituents to enable sheet molding.

Placing a ferroelectric layer outside the active area resolves capacitance matching issues while enabling sub-threshold swing below 60 mV/decade.

Defines specific via placement regions based on consumption current to reduce signal wiring congestion around macro cells.

A semiconductor package manufacturing method uses a segmented support body to arrange chips and form resin layers.

Bending wing portions into guard rail trenches uses elastic restoring force to secure the shield without adhesives.

Redistribution lines reposition chip pads to shorten wirebonding connections, avoiding substrate blockage and layout redesign costs.

Segmenting contact holes into lower and upper sections reduces the depth-to-width ratio, easing metal deposition in high-K dielectric structures.

A packaging structure uses a template cavity to form a localized protective epoxy layer over chip and bonding wires.

A semiconductor structure uses a dummy gate to define contact holes for source/drain regions before final gate formation.

Replacing dielectric layers with low-k materials suppresses fringing electric fields to minimize parasitic cell formation and improve programming accuracy.

An antifuse structure merges a sensing transistor directly into the cell to detect internal resistance changes via conductance shifts.

Lateral electrode expansion stabilizes RRAM resistance states while maintaining low step heights to prevent current leakage.

Resin sheets prevent outgas fouling of suction holes, ensuring reliable semiconductor chip mounting and effective heat transfer.

Embedding memory devices directly into organic substrates using EMIB interconnects eliminates silicon interposers and TSVs to reduce latency.

Segmenting the heat spreader frame into vertical bodies bridges poor encapsulant conductivity, resolving temperature-reliability trade-offs.

Screen printing conductive paste creates a ground plane that reduces manufacturing complexity while shielding sensitive components from electromagnetic fields.

Specific dimensional relationships between contact pads and underbump metallization prevent passivation layer cracks during manufacturing.

Transfer solder layer from intermediate structure to bump core on die, resolving thermocompression bond failure under temperature cycling stress.

Adjusting non-default-rule line widths based on current levels mitigates electromigration risks while reducing capacitance in integrated circuit designs.

A microelectronic package uses mirror-image pillars to attach stacked dice directly to a substrate.

Aerosol jet printing deposits solderable material to form interconnect structures, eliminating expensive subtractive processes and reducing material waste.

Silicon interposers fan out metal pitches to reduce package height in three-dimensional integrated circuits.

A semiconductor device uses openings on the encapsulation member to expose element surfaces for direct electrical connection.

Nested vertical channel structures with isolation layers reduce cell array area while maintaining operational reliability.

Bonding memory dies to both sides of a CMOS support die increases vertical stacking capacity.

An interposer chip with through-substrate vias electrically couples a voltage regulator module to a processor.

A material-free void between adjacent fuses prevents crack propagation during laser blow operations.

Mobile charge collectors attract stray charges from insulation layers, reducing threshold voltage fluctuations without increasing active region area.

A suspended MEMS getter platform heats thin-film material locally, preventing thermal damage to surrounding semiconductor devices during activation.

Rotated metal segments on segmented bond pads reduce CMP dishing and voids, ensuring structural integrity in 3D integrated semiconductor devices.

Embeds electronic components within carrier cavities to shorten electrical paths, eliminating high-aspect-ratio vias that distort high-speed signals.

Dip coating deposits resin into thinned semiconductor through holes, preventing peripheral damage and ensuring electrical insulation.

Vertical stacking of metal layers reduces parasitic capacitance and substrate loss, improving quality factor Q for high-frequency differential circuits.

A heat dissipating coating composition combines a main resin with carbon-based fillers to form a thermally conductive layer.

Ring dam interconnects extend power paths to chip centers, reducing voltage drops in stacked semiconductor devices.

Replacing glue or screws with magnetic attraction stabilizes adhesion across temperature ranges while preventing mechanical distortion of delicate components.

A vertical semiconductor memory device stacks gate electrodes to boost integration density while reducing manufacturing complexity of fine patterns.

Thermal treatment expands metal grain size and alters crystal orientation to reduce dishing effects during chemical mechanical polishing.

Varying the insulating material height on the wiring board promotes resin flow and void discharge, preventing electrical leaks in flip-chip connections.

Graded stiffness in the thermal stress compensation layers prevents delamination caused by coefficient of thermal expansion mismatch during cooling.

Openings in a flexible substrate reduce shrinkage and warpage by accommodating thermal expansion differences, ensuring stable die attachment.

A wire bonding structure uses a segmented pressed surface to concentrate pressure and secure the bond.

Wire bonds on a conductive layer with dielectric encapsulation create compact packages that reduce signal propagation time.

Selective silver plating on copper plate main surfaces prevents migration while maintaining strong adhesion with module sealing resin.

Lateral traces extend through cavity walls to increase interconnection density while reducing substrate layer count.

Molded body carriers eliminate copper webs to prevent corrosion and enable faster sawing speeds for higher packing densities.

Simultaneous punching and insertion of pins into substrate through-holes eliminates separate brazing steps, reducing manufacturing complexity and cost.

Thermal metal reflow fills high aspect ratio vias without voids, overcoming barrier layer volume constraints.

Connecting and supporting bumps on a driving chip distribute pressure during compression bonding, preventing flexible display panel deformation.

A molding compound wraps lateral sides of a thin film package substrate to provide structural rigidity for redistribution layers.

Vertical gate e-fuse transistors resolve area constraints by enabling direct sensing without amplifiers.

Inorganic filler particles dispersed in organic polymer matrices boost creepage resistance and dielectric strength, resolving moisture degradation issues.

A MEMS power inductor uses high aspect ratio magnetic laminations surrounded by a crack-resistant structure to reduce eddy currents.

Segmented ground electrodes with cutouts reduce stray capacitance while maintaining shielding against external signal interference.

A tapered bump-on-lead interconnect structure routes signals directly to narrow pads using a single metal layer.

Low temperature co-fired ceramic sheet reduces thermal resistance by improving heat dissipation compared to conventional encapsulation materials.

Curved dimples in interconnection patterns lower shear stress by 72 percent, preventing delamination during thermal cycles.

Conductive studs replace delicate wire bonds to eliminate parasitic capacitance, inductance, and electromagnetic interference susceptibility.

A semiconductor package uses a non-planar heat spreading layer and spacer to manage thermal expansion.

A monitoring pattern with line-ended and non-line-ended cuts measures stitching critical dimensions on semiconductor wafers.

Trench structures with N-type impurity doped regions block secondary electron diffusion, reducing transient program disturb in scaled dual bit memory cells.

A curable silicone rubber composition establishes strong adhesion to difficult substrates and electrodes using a specific catalyst system.

A vapor chamber coupler joins the display panel to a fluid-filled cooling plate for rapid heat transfer.

Vertical stacked conductive features mitigate hot carrier injection and enhance RF performance in scaled LDMOS transistors.

Varying the power rail width in specific regions reduces electrical resistance and power loss while maintaining design rule compliance.

Phase-changeable materials switch between conductive and non-conductive states, eliminating costly photomasks and maintaining manufacturing throughput.

Segmented source electrode terminal supports bonding wires at both ends, resolving connection instability during high current conduction.

Inverting the silicide formation sequence to repair capping layer damage from etching, achieving low resistance contacts with improved process stability.

Varying dummy channel widths stabilize stacked memory levels, resolving structural instability from increased storage capacity.

A silane-based adhesion promoter layer bonds dielectric and silicon surfaces to enhance interface strength.

Segmented polymer layers support fine pitch metallic posts, resolving the trade-off between lithographic precision and mechanical stress relief.

Sputtering aluminum layers forms a sea-island structure that maintains millimeter wave transparency while reducing product cost.

Surface plating layers on exposed leads improve solder bonding strength, reducing cracking risks caused by stress-induced detachment from circuit boards.

A dual-layer alignment apparatus uses a fixed frame and single motion stage to derive positional relationships for precise target displacement.

A multi-chip package system integrates sensors within a substrate cavity to reduce overall height and area.

Grey-tone mask patterning aligns source and drain regions directly with semiconductor layers, reducing mask steps and improving aperture ratio.

Metallic shield structures and support vias reinforce organic interposers, reducing distortion during underfill application.

Varying wiring layer resistance redirects current flow to prevent crowding at vias and reduce electromigration risk.

Vertical integration of integrated circuit dies via a die-attach paddle mitigates severe warpage and electromagnetic interference in thin profiles.

Existing integrated circuit packaging technologies face challenges in minimizing signal reflections and distortion due to impedance mismatches, which are typically addressed by increasing circuit complexity and power consumption through active cancellation or equalization.

Merging individual memory dies into a single unit improves heat dissipation and VDD ground access while managing device complexity.

Ruthenium and cobalt alloy layers form a composite barrier that prevents oxidation of the ruthenium diffusion barrier in semiconductor interconnects.

Integrated arc gaps dissipate electrostatic discharge energy through the package substrate, reducing die damage risk without adding external circuit complexity.

A brazed cold plate fluid port assembly uses a flanged body and locating features to secure the component to sheet apertures.

A light-emitting device uses a white reflector and transparent covering layer to enhance light extraction.

A light emitting device uses a reflective protecting element to encapsulate the chip and wavelength conversion layer.

A shielding layer forms within a trench through the encapsulant and substrate of a semiconductor device.

A cable connector housing supports a heat sink while a thermal shield creates a barrier between the sink and internal conductors.

Dual mold members seal stacked NAND and controller chips, reducing outer size while protecting against external stress.

Concurrent laser activation and electroless plating form circuits, reducing multi-step costs.

A multilayer substrate employs a mesh ground with differently shaped openings to minimize electrical characteristic variations caused by signal line overlap.

Optimized semiconductor structures stabilize breakover voltages against temperature shifts, resolving speed-reliability trade-offs in high-voltage protection.

Patterned resist layers replace encapsulants for drilling, reducing surface roughness and improving electroplating reliability.

Sidewall contact and extending portions of the barrier layer prevent moisture permeation through package sides, extending service life.

Elastic resin patterns with height differences relieve residual strain from non-uniform bumps, preventing chip warpage during bonding.

Two-stage etching prevents mechanical damage and short-circuit risks during semiconductor chip singulation.

Thermally conductive mounting block with isolated conductive leads extends into a reflective cavity for semiconductor light emitting devices.

Composite passivation layers and embedded pad rings form a seal ring that prevents mist ingress and stress damage during singulation.

LDS processing creates through-mold vias that extend through the molding compound, increasing I/O count without enlarging the package footprint.

Parallel tool markings on the die pad prevent molding compound bleeding and reduce mold flash by up to 44 percent.

Segmented interposers embedded in dielectric encapsulation resolve CoWoS integration limits by enabling smaller feature sizes and higher yield.