Semiconductor Through Hole Insulation via Dip Coating
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Solution Overview
Problem
Semiconductor devices face challenges in preventing damage to the peripheral portions of through holes during substrate thinning and ensuring reliable electrical insulation between wirings and the substrate.
Innovation Solution
A method involving a support substrate, dip coating with resin materials of sufficient viscosity to form continuous insulating and protective layers within the through holes, and careful handling to prevent stress and bubble formation, ensuring the integrity of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor substrate is thinned to reduce device size and achieve high integration, then the device size is reduced and integration is improved, but damage occurs to the peripheral portion of the through hole and electrical insulation cannot be ensured
Solution Approach 1:
A support substrate is attached to the semiconductor substrate before the through hole formation process. This preliminary action provides mechanical support to the thin substrate during subsequent processing steps, preventing damage to the through hole peripheral portions while allowing the substrate to be thinned to the desired thickness for high integration.
Solution Approach 2:
A resin insulating layer is formed as an intermediary between the through hole and the semiconductor substrate. This resin layer provides electrical insulation while maintaining the structural integrity of the thinned substrate, solving both the size reduction and insulation requirements simultaneously.
2Volume of moving object
If the semiconductor substrate is thinned to reduce device size, then the device size is reduced, but damage is likely to occur in the peripheral portion of the through hole
Solution Approach 1:
The support substrate is attached in advance before thinning and through hole formation processes. This preliminary reinforcement prevents mechanical damage to the through hole peripheral portions during processing, enabling safe substrate thinning for compact device design.
Solution Approach 2:
The support substrate acts as a cushioning layer that absorbs mechanical stress during processing. By providing this protective layer beforehand, the thin semiconductor substrate is protected from damage during through hole formation and subsequent processing steps.
3Reliability
If a resin insulating layer is formed to ensure electrical insulation, then electrical insulation is improved, but the process complexity increases
Solution Approach 1:
The resin insulating layer is formed using a dip coating method, where the substrate is simply immersed in resin material and then withdrawn. This self-service approach allows the resin layer to form automatically through capillary action and surface tension, eliminating the need for complex deposition equipment or multiple processing steps while ensuring uniform electrical insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents damage to the peripheral portions of through holes and ensures reliable electrical insulation, maintaining the structural integrity and functionality of the semiconductor device during thinning and operation.
Implementation Method 1
a dip coating method is performed using a first resin material and thus a resin insulating layer that is continuous through a second opening of the through hole on the second surface side is provided on an inner surface of the through hole and the second surface
Data Source
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AI summary
A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.