Seal Ring Structure with Passivation Layers for IC Singulation

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Solution Overview

Problem

Existing seal structures in semiconductor integrated circuits are inadequate in protecting devices from mist ingress and stress during the singulation process, which can lead to damage.

Innovation Solution

The implementation of a passivation structure with a substrate, interconnect structure, and a polymer layer that includes a first and second passivation layer with embedded pad structures, forming a seal ring structure around the device region to prevent damage from stress and mist ingress during the singulation process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing seal structures are used to protect semiconductor devices, then some protection is provided, but the structures are insufficient to prevent damage from mist ingress and stress during singulation

Engineering Contradiction:
Improveprotection effectivenessVSAvoidmist ingress and stress damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent employs a composite seal structure consisting of multiple material layers including a first seal layer, a second seal layer with different material properties, and a stress relief layer. These composite materials provide enhanced protection against both mist ingress and mechanical stress during singulation, resolving the insufficiency of existing single-material seal structures.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The seal structure is divided into multiple functional segments: an outer seal structure with a first seal layer and second seal layer for mist protection, and an inner seal structure with a stress relief layer specifically for stress management during singulation. This segmentation allows each layer to address specific harmful factors independently, improving overall protection effectiveness.

Inventive Principle:
Principle #1Segmentation

2Productivity

If geometry size is decreased to increase functional density, then production efficiency increases and costs decrease, but processing complexity increases

Engineering Contradiction:
Improveproduction efficiencyVSAvoidprocessing complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The seal structures and stress relief features are formed as integral parts of the interconnect structure during the backend-of-line (BEOL) processing stages, before the singulation process. This preliminary formation of protective structures eliminates the need for additional post-fabrication protection steps, maintaining production efficiency while managing processing complexity through integrated design.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The interconnect structure is designed to serve multiple functions: electrical interconnection, mechanical support, and stress relief during singulation. By making the interconnect structure multi-functional, the patent avoids adding separate dedicated stress relief components that would increase processing complexity, while still providing comprehensive protection.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20230026785A1Seal structures including passivation structures
Publication Date: 2023.01.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20230026785A1 patent drawing
  • US20230026785A1 patent drawing
  • US20230026785A1 patent drawing

AI summary

Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes a substrate that has a device region and a ring region surrounding the device region, an interconnect structure disposed on the substrate, a first passivation layer disposed over the interconnect structure, a first contact via ring embedded in the first passivation layer, a first contact pad ring disposed on the first contact via ring and the first passivation layer, a second passivation layer disposed over the first contact pad ring, and a polymer layer disposed on a portion of the second passivation layer. The first contact via ring and the first contact pad ring completely surround the device region.