Silane Adhesion Promoter for Semiconductor Dielectric Interfaces

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Solution Overview

Problem

Conventional methods for enhancing dielectric-to-component adhesion in embedded substrate components are limited by the bulk material properties being affected at a certain weight percent of adhesion additives, restricting the amount of adhesion that can be introduced at the interface, and only surface molecules are utilized for bonding, leaving bulk resin material unutilized.

Innovation Solution

A silane-based adhesion promoter layer is applied to the interface between the dielectric and silicon die, forming a monolayer that bonds with both surfaces, preventing dispersion within the dielectric layer and allowing increased adhesion promoter molecules at the interface, which crosslink to form a siloxane network, enhancing adhesion and hydrophobicity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If adhesion additives are mixed into the dielectric varnish, then adhesion between dielectric and component is improved, but the material properties of the bulk resin are adversely affected

Engineering Contradiction:
Improveadhesion strengthVSAvoidbulk resin material properties
Core Design Contradiction:
StrengthVSStability of the object's composition

Solution Approach 1:

The patent divides the dielectric structure into two distinct regions: a bulk dielectric layer with uniform material properties and a separate adhesion promoter layer at the interface. This segmentation allows the adhesion promoter to be concentrated where needed for bonding without dispersing throughout the bulk resin, thereby maintaining bulk material properties while achieving strong adhesion.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies adhesion promoter molecules specifically at the dielectric-component interface rather than uniformly throughout the bulk dielectric. This local concentration of adhesion-enhancing properties at the critical bonding interface maximizes adhesion strength without adversely affecting the bulk resin material properties.

Inventive Principle:
Principle #3Local quality

2Strength

If adhesion additives are mixed into the dielectric varnish, then adhesion between dielectric and component is improved, but only surface molecules are available for chemical bonding while bulk material remains unutilized

Engineering Contradiction:
Improveadhesion strengthVSAvoidutilization of adhesion additive molecules
Core Design Contradiction:
StrengthVSQuantity of substance

Solution Approach 1:

The patent extracts the adhesion promoter function from the bulk dielectric material and places it in a separate adhesion promoter layer at the interface. This extraction allows adhesion promoter molecules to be concentrated and efficiently utilized at the bonding interface, with each molecule positioned to participate in chemical bonding rather than being lost in the bulk material.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent creates a composite structure consisting of the bulk dielectric layer combined with an adhesion promoter layer at the interface. This composite approach allows the bulk dielectric to maintain its electrical and mechanical properties while the adhesion promoter layer provides concentrated bonding capability, maximizing the utilization of adhesion additive molecules.

Inventive Principle:
Principle #40Composite materials

3Strength

If a silane-based adhesion promoter layer is applied at the interface, then adhesion strength and hydrophobicity are enhanced, but an additional manufacturing step is required

Engineering Contradiction:
Improveadhesion strengthVSAvoidmanufacturing process complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent applies the silane-based adhesion promoter layer to the component surface before assembling the dielectric component. This preliminary action ensures that the adhesion promoter is already in place to maximize bonding when the dielectric is cured, achieving strong adhesion while integrating the step into the existing manufacturing sequence.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The silane-based adhesion promoter layer acts as an intermediary between the component surface and the dielectric material. This intermediary layer provides both adhesion enhancement and hydrophobicity, facilitating strong chemical bonding while protecting the interface from moisture, thereby improving reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach increases adhesion strength, prevents material property alteration of the dielectric layer, and enhances hydrophobicity by increasing the proximity of adhesive promoters, leading to improved signal integrity and reliability.

Implementation Method 1

the adhesive additive molecules in contact with an embedded component can form covalent chemical bonds—thereby increasing the adhesion between dielectric and component

Methodology Applied
Scientific EffectCovalent chemical bonding: Chemical Bonding

Implementation Method 2

allowing increased adhesion promoter molecules at the interface, which crosslink to form a siloxane network, enhancing adhesion and hydrophobicity

Methodology Applied
Scientific EffectCrosslinking: Chemical Bonding

Implementation Method 3

enhancing adhesion and hydrophobicity

Methodology Applied
Scientific EffectHydrophobicity: Hydrophobe

Data Source

PatentUS10916486B2Semiconductor device including silane based adhesion promoter and method of making
Publication Date: 2021.02.09 INTEL CORP
  • US10916486B2 patent drawing
  • US10916486B2 patent drawing
  • US10916486B2 patent drawing

AI summary

Various embodiments disclosed relate to semiconductor device and method of making the same using functional silanes. In various embodiments, the present invention provides a semiconductor device including a silicon die component having a first silica surface. The semiconductor device includes a dielectric layer having a second surface generally facing the first silica surface. The semiconductor device includes an interface defined between the first surface and the second surface. The semiconductor device also includes a silane based adhesion promoter layer disposed within the junction and bonded to at least one of the first silica surface and the dielectric layer second surface.