Embedded Power Package Clip Layout for Stacked MOSFETs
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving high-density, high-speed, and high-performance integrated circuits due to limitations in die placement and connection methods, particularly with unequal-sized MOSFETs, which lead to increased resistance and assembly risks.
Innovation Solution
The proposed solution involves embedding semiconductor dies in dielectric fill material layers using a dam-and-fill technique, with connector clips and wire bonding to establish close electrical connections between dies, allowing for vertical stacking and reducing resistance and assembly complexities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor die are embedded within substrate using conventional methods, then device density is improved, but resistance increases and assembly complexity worsens
Solution Approach 1:
A connector clip serves as an intermediary component between the embedded semiconductor die and the substrate surface. The clip extends through the dielectric fill material, providing a direct electrical connection path that reduces resistance compared to conventional embedded methods. This mediator allows the die to be embedded for density while maintaining low resistance through the clip's conductive path.
Solution Approach 2:
The connector clip introduces a vertical dimension to the electrical connection, extending from the embedded die through the dielectric layer to the substrate surface. This three-dimensional connection approach allows simultaneous achievement of high device density (through embedding) and low resistance (through vertical conductive path), resolving the contradiction between embedding benefits and electrical performance.
2Adaptability or versatility
If unequal-sized MOSFETs are placed using conventional methods, then device functionality is achieved, but assembly risk and complexity increase
Solution Approach 1:
The connector clip structure provides a universal mounting platform that can accommodate MOSFETs of different sizes. The clip's design with accommodating features allows both small and large MOSFETs to be mounted using the same process, eliminating the need for different assembly procedures. This universal approach maintains device functionality while significantly reducing assembly complexity and risk.
Solution Approach 2:
The connector clip is segmented into distinct functional portions: an embedded portion for securing the MOSFET, a vertical connection portion for electrical connectivity, and a surface portion for substrate mounting. This segmentation allows each portion to be optimized for its specific function while working together to simplify the overall assembly process for unequal-sized devices.
3Reliability
If more connector clips are used to reduce resistance, then electrical performance is improved, but device complexity increases
Solution Approach 1:
Each connector clip is designed as a multi-functional component that simultaneously provides mechanical support for the MOSFET, electrical connection through the dielectric layer, and mounting interface on the substrate surface. This universal design means that adding more clips to reduce resistance does not proportionally increase complexity, as each clip performs multiple functions in a single integrated structure.
Data Source
AI summary
A package includes a dielectric fill material layer embedding a first semiconductor die, a connector clip, and a second semiconductor die. The connector clip has a segment disposed above the dielectric fill material layer embedding the first semiconductor die. This segment of the connector clip is aligned along a same direction as a top surface of the first semiconductor die. The second semiconductor die is disposed on the segment of the connector clip disposed above the dielectric fill material layer.