Embedded Temperature Sensor Layout for 3D-IC Hotspot Detection
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Solution Overview
Problem
The challenge of thermal management in 2.5D-ICs and 3D-ICs is exacerbated by low thermal conductivity of inter-layer dielectrics and high power-density, leading to increased power consumption, leakage currents, and thermal issues due to overlapping hotspots, which affect the complexity and performance of stacked circuits.
Innovation Solution
Incorporation of in-situ temperature sensors, such as thin film transistors with indium gallium zinc oxide channels, embedded in interconnects during BEOL processes, to detect and manage thermal offsets by calculating hotspot temperatures and providing thermal feedback for the system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple dies are stacked to increase transistor density, then the number of transistors increases, but thermal management becomes severe due to low thermal conductivity of inter-layer dielectrics and high power-density
Solution Approach 1:
Temperature sensors are embedded in the interconnect structure during the BEOL manufacturing process before the device is operational. This preliminary integration allows for real-time temperature monitoring to be established before thermal issues arise, enabling proactive thermal management in densely stacked 3D-IC configurations
Solution Approach 2:
Temperature sensors act as intermediary elements embedded within the interconnect structure, mediating between the heat-generating devices and the external thermal management system. These sensors provide real-time temperature data that enables indirect thermal control without directly interfering with the high-density device stacking
2Measurement precision
If in-situ temperature sensors are embedded in interconnects, then thermal detection accuracy improves, but device complexity increases
Solution Approach 1:
The temperature sensing function is merged with the existing interconnect structure by embedding sensors within the interconnect layers during the BEOL process. This integration combines two functions (interconnection and temperature sensing) into a single unified structure, reducing overall device complexity while maintaining high temperature detection accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances thermal management by accurately detecting and addressing overheating, preventing device damage, and maintaining routing and floorplan integrity, while simplifying manufacturing processes and reducing costs through early design integration of thermal detection.
Implementation Method 1
A first resistance of the first resistor is subtracted from a second resistance of the second resistor to obtain a first resistance difference, wherein the first resistance difference is linearly related to a first device temperature
Data Source
AI summary
A semiconductor device includes a first substrate and a first device layer. The first device layer is disposed on the first substrate and includes a first region and a second region of the first device layer. The first device layer includes at least one first device and a sensor aside the at least one first device. The sensor includes a first resistor with a first non-linear temperature resistance curve and a second resistor with a second non-linear temperature resistance curve. A temperature of the sensor is linearly related to a difference between a first resistance of the first resistor at the temperature and a second resistance of the second resistor at the temperature.