Embedded Semiconductor Structure for Image Sensor Defect Containment

The semiconductor structure is segmented into distinct regions: active regions for photoelectron generation and dummy regions for defect containment. The dummy regions are further segmented with convex portions protruding and concave portions recessed, creating a segmented pattern that isolates dislocation defects within these dedicated zones while preserving the functionality of the active regions, thus maintaining high functional density without compromising reliability.

The patent converts the harmful effect of dislocation defects into a beneficial design feature by intentionally creating dummy regions with convex and concave portions that serve as defect traps. These regions are positioned to capture and contain dislocation defects, preventing them from propagating into active regions and causing pixel leakage. This transforms the problem of defect propagation into a controlled feature that enhances device reliability while maintaining high functional density.

The patent applies local quality by introducing convex and concave portions only in specific dummy regions rather than throughout the entire semiconductor structure. These localized geometric features are strategically positioned at the edges of active regions where dislocation defects are most likely to occur. The convex portions protrude toward adjacent structures while concave portions recess, creating a localized pattern that provides defect containment functionality only where needed, thus improving reliability without unnecessarily increasing overall structural complexity.