Emission Driver Using Single Transistor Type for Display Integration
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Solution Overview
Problem
Conventional electroluminescent displays, such as organic electroluminescent displays, are large, heavy, and costly due to the complexity of manufacturing when using both PMOS and NMOS transistors in their emission drivers, requiring separate processes and external drivers for pixel units formed with single types of transistors.
Innovation Solution
An emission driver and electroluminescent display design that utilizes only p-type or n-type transistors, specifically PMOS or NMOS transistors, to simplify the manufacturing process, reduce size and weight, and integrate the emission driver directly with the pixel unit, employing multiple signal processors and transistors to generate output signals based on clock, input, and feedback signals, with capacitors to manage voltage and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If both PMOS and NMOS transistors are used in the emission driver, then the emission driver can be formed with conventional transistor types, but the device size increases, weight increases, and manufacturing complexity increases
Solution Approach 1:
The patent applies homogeneity by using only PMOS transistors (or only NMOS transistors) throughout the entire emission driver circuit, including all switching transistors, drive transistors, and compensation transistors. This eliminates the need for separate PMOS and NMOS fabrication processes, simplifying manufacturing while reducing device size and weight.
Solution Approach 2:
The patent makes the emission driver universally compatible with single-type transistor pixel units by designing the entire driver circuit using only one transistor type (PMOS or NMOS). This allows the driver to be integrated on the same substrate without requiring separate external drivers, reducing overall device weight and complexity.
2Ease of manufacture
If both PMOS and NMOS transistors are used in the emission driver, then the emission driver can operate with conventional transistor characteristics, but the device area increases and manufacturing cost increases
Solution Approach 1:
The patent uses exclusively PMOS transistors (or exclusively NMOS transistors) in the emission driver circuit, eliminating the need for separate PMOS and NMOS process regions. This homogenization reduces the total chip area required for the driver and simplifies the manufacturing layout.
Solution Approach 2:
The patent merges the emission driver functionality directly into the pixel array substrate by using only one transistor type, allowing the driver to be formed in the same fabrication process as the pixel units. This integration reduces the overall device area by eliminating separate driver chip space.
3Ease of manufacture
If both PMOS and NMOS transistors are used in the emission driver, then the emission driver can be formed with standard transistor configurations, but the manufacturing complexity increases due to additional processes
Solution Approach 1:
The patent employs only PMOS transistors (or only NMOS transistors) in the emission driver, which can be formed using a single type of transistor fabrication process. This eliminates the need for separate PMOS and NMOS process steps, reducing manufacturing complexity while maintaining driver functionality.
Solution Approach 2:
The patent changes the transistor type parameter from a mixed PMOS/NMOS configuration to a uniform single-type configuration. This parameter change simplifies the fabrication process by requiring only one transistor formation process, reducing the number of lithography and doping steps needed.
4Ease of manufacture
If only PMOS or NMOS transistors are used in the pixel unit, then the pixel unit can be formed with a single transistor type, but an additional process or external driver is required if the emission driver uses both PMOS and NMOS transistors
Solution Approach 1:
The patent makes the emission driver homogeneous by using only PMOS transistors (or only NMOS transistors), matching the single-type transistor configuration of the pixel units. This allows both the pixel units and emission driver to be formed in the same fabrication process without requiring additional processes or external drivers.
Solution Approach 2:
The patent merges the emission driver with the pixel array by using the same single-type transistor configuration for both. This integration allows the driver to be formed on the same substrate during the same fabrication process, eliminating the need for separate external driver chips or additional process steps.
Data Source
AI summary
An emission driver may include a first signal processor adapted to receive a clock signal, an input signal and an inverse input signal, and generate a first output signal, a second signal processor adapted to receive the first output signal, an inverse clock signal and negative feedback signals, and generate a second output signal, a third signal processor adapted to receive the second output signal and the input signal, and generate a third output signal that is an inverse of the second output signal based on the input signal, a fourth signal processor adapted to receive the second output signal, and generate a fourth output signal based on the second output signal, the fourth output signal being an inverse signal of the third output signal, and a fifth signal processor adapted to receive the fourth output signal and output a fifth output signal based on a stored predetermined voltage.