Encapsulated Carbon Nanofiber Layer for Chip Heat Dissipation
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Solution Overview
Problem
Conventional methods cannot grow carbon nanofibers directly on semiconductor chips due to the high temperature required, which damages the chips, leading to thermal issues and potential overheating in semiconductor devices.
Innovation Solution
Grow carbon nanofibers on silicon substrates using a high-temperature process, then encapsulate them with a molding compound, and integrate the encapsulated layer into semiconductor devices through fusion bonding or other methods, allowing for improved thermal conductivity and mechanical strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If carbon nanofibers are grown directly on semiconductor chips using high-temperature process, then thermal conductivity is improved, but the chips are damaged due to high temperature
Solution Approach 1:
The system is divided into separate components: carbon nanofibers are grown on a sacrificial substrate separately from the semiconductor chip. The sacrificial substrate is then removed, and the carbon nanofiber layer is transferred to the chip using wafer-to-wafer fusion bonding. This segmentation allows high-temperature processing to occur on the sacrificial substrate without exposing the chip to damaging temperatures.
Solution Approach 2:
A sacrificial substrate acts as an intermediary carrier for growing the carbon nanofiber layer. This substrate withstands the high-temperature growth process, protecting the semiconductor chip from thermal damage. The sacrificial substrate is subsequently removed through selective release, leaving only the carbon nanofiber layer attached to the chip.
2Temperature
If carbon nanofibers are integrated into semiconductor devices, then thermal dissipation is enhanced, but device complexity increases
Solution Approach 1:
The carbon nanofiber layer is pre-grown on a sacrificial substrate before integration with the semiconductor chip. This preliminary action allows the complex high-temperature growth process to be completed separately, simplifying the final integration step which uses standard wafer-to-wafer fusion bonding techniques already employed in semiconductor manufacturing.
Solution Approach 2:
The method employs parameter changes in the form of selective release mechanisms. The sacrificial substrate is designed with specific properties that allow it to be removed at a particular stage through controlled parameter changes (such as temperature or chemical treatment), enabling clean separation and transfer of the carbon nanofiber layer without damaging the chip.
3Device complexity
If conventional methods are used for thermal management, then device simplicity is maintained, but overheating occurs in stacked die configurations
Solution Approach 1:
The invention uses carbon nanofibers as a composite thermal management material integrated into the semiconductor device. Carbon nanofibers possess superior thermal conductivity properties compared to conventional thermal management materials, enabling effective heat dissipation in stacked die configurations while maintaining a relatively simple device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The encapsulated carbon nanofiber layer enhances thermal dissipation and mechanical stability in semiconductor devices, preventing overheating and improving the reliability of chip assemblies.
Implementation Method 1
improved thermal conductivity and mechanical strength
Implementation Method 2
integrate the encapsulated layer into semiconductor devices through fusion bonding
Data Source
AI summary
A semiconductor device assembly that includes carbon nanofibers (CNFs) for heat dissipation has a CNF layer. Molding compound encapsulates the CNF layer to form an encapsulated CNF layer. The molding compound extends between individual adjacent CNFs within the encapsulated CNF layer, and upper edges of at least a portion of individual CNFs within the encapsulated CNF layer are exposed along an upper surface of the encapsulated CNF layer. The upper surface of the CNF layer is removably attached to a bottom surface of a carrier wafer.